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NLU1G04MUTCG

Onsemi

NLU1G04MUTCG by Onsemi

NLU1G04MUTCG by Onsemi is a CMOS Logic Gate with 6 terminals, operating at temperatures from -55 to 125 °C. It has a propagation delay of 14.5 ns and can handle a load capacitance of 50 pF. Ideal for military applications due to its small outline package and low power supply current requirements.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 171,000 parts In-Stock

1+ parts

-

100+ parts

$0.245

1k+ parts

$0.203

10k+ parts

$0.181

171,000

-

$0.245

$0.203

$0.181

Farnell

UK . 171,000 parts In-Stock

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$0.159

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$0.159

DigiKey

USA . 84,000 parts In-Stock

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$0.130

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$0.130

Flip Electronics (Authorized)

USA . 84,000 parts In-Stock

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84,000

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Verical

USA . 72,000 parts In-Stock

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$0.226

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$0.226

Distributors (In-Stock)

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Vyrian

USA . 1,206 parts In-Stock

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$0.159

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$0.159

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Digiode

USA . 457 parts In-Stock

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$0.200

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457

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Flip Electronics

USA . 84,000 parts In-Stock

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84,000

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Chip Stock

USA . 75,000 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 429 parts In-Stock

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$0.159

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429

$0.159

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Corphita

USA . 432 parts In-Stock

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$0.189

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432

$0.189

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Continental Prestige Electronics

USA . 171,000 parts In-Stock

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$0.154

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171,000

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$0.154

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QUARKTWIN TECHNOLOGY LTD

USA . 20,092 parts In-Stock

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TANS Electronics

Latvia . 7,800 parts In-Stock

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7,800

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Problanco Electronics

Mexico . 7,754 parts In-Stock

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Kulean Microsystems

USA . 7,650 parts In-Stock

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SupplyDigital Components

Austria . 1,609 parts In-Stock

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1,609

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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865

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Microchip USA

USA . 227 parts In-Stock

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Overview

Looking for reliable and high-quality logic gates? Look no further than the Onsemi NLU1G04MUTCG. With its advanced technology and military-grade temperature grade, this product ensures top-notch performance in a variety of applications. From consumer electronics to industrial machinery, this logic gate offers fast propagation delay and low power consumption. Experience the benefits of seamless integration and optimal functionality with the Onsemi NLU1G04MUTCG. Trust in Onsemi's reputation for excellence and unlock the potential of your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the logic gates, making them suitable for a variety of applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and enabling automated production processes.

Nominal Supply Voltage / Vsup (V): 3

Operates at a common voltage level, making it compatible with a wide range of systems and power sources.

Propagation Delay (tpd): 14.5 ns

Offers fast signal processing speeds, enhancing the overall performance of the logic gates in time-sensitive applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable operation even in challenging environmental conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, making the logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates NLU1G04MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLU1G04MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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