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NLU1G07CMUTCG

Onsemi

NLU1G07CMUTCG by Onsemi

NLU1G07CMUTCG by Onsemi is a CMOS Logic Gate with 14.5ns Propagation Delay, suitable for military applications. It operates at 1.8/5V power supplies, has a load capacitance of 50pF, and features open-drain output characteristics. This surface-mount device comes in a small outline package with very thin profile, making it ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,467 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 8,347 parts In-Stock

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Kulean Microsystems

USA . 7,959 parts In-Stock

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Problanco Electronics

Mexico . 7,546 parts In-Stock

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TANS Electronics

Latvia . 1,852 parts In-Stock

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Corphita

USA . 1,213 parts In-Stock

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Discover the exceptional NLU1G07CMUTCG by Onsemi, a top-quality Logic Gate that guarantees reliable performance and efficiency. With a package body made of durable PLASTIC/EPOXY material, this product boasts a fast propagation delay of 14.5 ns, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this Logic Gate is designed to deliver outstanding results. Trust in Onsemi's reputation for excellence and innovation, and unlock the countless benefits and advantages that the NLU1G07CMUTCG brings to your projects. Choose quality, choose reliability, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for a variety of applications.

Propagation Delay At Nominal Supply: 14.5 ns

Fast propagation delay ensures quick response time, making the product efficient for high-speed operations.

Surface Mount: YES

Surface mount design allows for easy and compact installation, saving space on the PCB.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common voltage level, making it compatible with many different systems.

Load Capacitance (CL): 50 pF

Suitable for driving moderate loads, ensuring stable performance in typical applications.

Power Supplies (V): 1.8/5

Supports a range of power supply voltages, offering flexibility in system design.

No. of Terminals: 6

Sufficient number of terminals for connecting to external circuitry and peripherals.

Maximum I (ol): 4 Amp

High output current capability allows driving of heavy loads without external buffers.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration provides versatility and compatibility with a wide range of devices.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliable performance in extreme environmental conditions.

Technical Specifications

Logic Gates NLU1G07CMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

14.5 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU1G07CMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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