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NL17SZU04XV5T2G-L22087

Onsemi

NL17SZU04XV5T2G-L22087 by Onsemi

NL17SZU04XV5T2G-L22087 by Onsemi is a CMOS Logic Gate with 6.6ns Propagation Delay, 1.8V Nominal Voltage, and 50pF Load Capacitance. Ideal for industrial applications requiring fast signal processing in compact designs due to its small outline package and low power consumption of 0.01mA at max supply voltage of 5.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,504 parts In-Stock

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Digiode

USA . 1,433 parts In-Stock

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Microchip USA

USA . 8,915 parts In-Stock

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$0.379

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AZTECH Wire

Italy . 280 parts In-Stock

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$14.450

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TANS Electronics

Latvia . 6,038 parts In-Stock

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Kulean Microsystems

USA . 5,037 parts In-Stock

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Problanco Electronics

Mexico . 4,043 parts In-Stock

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SupplyDigital Components

Austria . 2,546 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Corphita

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Overview

Enhance your projects with the NL17SZU04XV5T2G-L22087 by Onsemi, a top-of-the-line logic gate that delivers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this product boasts a durable PLASTIC/EPOXY package body material and a fast 6.6 ns propagation delay. Ideal for a wide range of applications, this logic gate offers a nominal supply voltage of 1.8V and a maximum power supply current of 0.01 mA. Experience the value and benefits of this high-quality component, trusted by professionals worldwide for its efficiency and precision. Elevate your designs with the NL17SZU04XV5T2G-L22087 and unleash your creativity today!

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 6.6 ns

Low propagation delay ensures fast operation and response times.

Nominal Supply Voltage: 1.8V

Low supply voltage saves power and is suitable for battery-operated devices.

Maximum Operating Temperature: 85 °C

High operating temperature range makes it suitable for industrial applications.

Technology: CMOS

CMOS technology provides high noise immunity and low power consumption.

Technical Specifications

Logic Gates NL17SZU04XV5T2G-L22087 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6.6 ns

Propagation Delay (tpd):

12.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.2 mm

Trade Compliance

NL17SZU04XV5T2G-L22087 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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