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NL17SZ02DFT2G

Onsemi

NL17SZ02DFT2G by Onsemi

NL17SZ02DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, Vsup range of 1.65V to 5.5V, and tpd of 12ns. Ideal for military-grade applications due to its MIL-STD temp range (-55°C to 125°C) and small form factor (1.25mm x 2mm). Features include ICC of 100mA, PLASTIC/EPOXY package material, and DUAL terminal position.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 12,104 parts In-Stock

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DigiKey

USA . 304 parts In-Stock

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Newark

USA . 4,240 parts In-Stock

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Chip1Stop

Japan . 21,000 parts In-Stock

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Avnet

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Arrow

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Verical

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Farnell

UK . 4,860 parts In-Stock

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Element14

Singapore . 4,860 parts In-Stock

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Maritex

Poland . 41,540 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Digiode

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NAC Semi

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Chip Stock

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Vyrian

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A&K Electronics

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Rotakorn

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Bristol Electronics

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NPI Materials, Inc.

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PC Components Company LLC

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Prism Electronics

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Semicontronic

India . 13,293 parts In-Stock

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Ampacity Inc.

Singapore . 13,292 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

USA . 50 parts In-Stock

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Corphita

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Vigor

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Aztec Data Supply Inc.

USA . 711 parts In-Stock

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Perfect Parts

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Microchip USA

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Overview

Unlock the power of seamless logic gate functionality with the NL17SZ02DFT2G by Onsemi. Manufactured with precision and expertise, this small outline, thin profile logic gate offers a wide range of applications in various industries. With a nominal supply voltage of 2.3V and a maximum operating temperature of 125°C, this product ensures reliable performance in harsh conditions. Experience the efficiency and reliability this logic gate brings to your projects, delivering exceptional value and benefits to customers seeking high-quality electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gate.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards.

No. of Inputs: 2

Suitable for basic logic operations and applications that require two input signals.

Nominal Supply Voltage / Vsup (V): 2.3

Optimized for efficient power usage and performance at the specified voltage.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, making it ideal for various industrial settings.

Minimum Operating Temperature: -55 °C

Designed to operate reliably in extreme low temperature conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates NL17SZ02DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL17SZ02DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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