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NL17SZ16DFT2

Onsemi

NL17SZ16DFT2 by Onsemi

NL17SZ16DFT2 by Onsemi is a CMOS Logic Gate with 5.2ns Propagation Delay, 50pF Load Capacitance, and 1.8V Nominal Voltage. Ideal for industrial applications requiring fast signal processing in compact designs due to its small outline package and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 48,500 parts In-Stock

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48,500

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Vyrian

USA . 8,997 parts In-Stock

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Semi Source

USA . 2,800 parts In-Stock

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2,800

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First Choice Components Inc.

USA . 920 parts In-Stock

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920

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Digiode

USA . 721 parts In-Stock

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721

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Distributors (Availability)

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Vigor

Singapore . 240 parts In-Stock

1+ parts

$0.050

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240

$0.050

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Ampacity Inc.

Singapore . 536 parts In-Stock

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$5.000

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536

$5.000

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AZTECH Wire

Italy . 421 parts In-Stock

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$19.240

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421

$19.240

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QUARKTWIN TECHNOLOGY LTD

USA . 12,461 parts In-Stock

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Microchip USA

USA . 5,324 parts In-Stock

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SupplyDigital Components

Austria . 4,953 parts In-Stock

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Problanco Electronics

Mexico . 4,199 parts In-Stock

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Kulean Microsystems

USA . 3,563 parts In-Stock

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TANS Electronics

Latvia . 2,579 parts In-Stock

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Perfect Parts

USA . 2,173 parts In-Stock

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UHIMA Technologies

Türkiye . 548 parts In-Stock

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548

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Corohmni

South Africa . 369 parts In-Stock

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369

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Corphita

USA . 290 parts In-Stock

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290

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Speed Components Ltd (Excess)

Israel . 11 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NL17SZ16DFT2 Logic Gates. Designed for a wide range of applications, this product offers fast propagation delay and low power consumption, making it ideal for demanding industrial environments. With a compact package design and high-performance capabilities, customers can trust in the value and efficiency that Onsemi provides. Upgrade your projects with the NL17SZ16DFT2 and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Propagation Delay At Nominal Supply: 5.2 ns

Fast propagation delay ensures quick response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage helps reduce power consumption and heat generation, making the product energy-efficient.

Load Capacitance (CL): 50 pF

Optimal load capacitance ensures stable performance in various circuit configurations.

Power Supplies (V): 3.3

Compatibility with common power supply voltages makes this product versatile for different applications.

No. of Terminals: 5

Simplified connection with a small number of terminals makes installation and troubleshooting easier.

Maximum I (ol): 24 Amp

High maximum output current allows for driving of heavy loads without the risk of damaging the device.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliability in extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance of the product.

Technical Specifications

Logic Gates NL17SZ16DFT2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

NL17SZ16DFT2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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