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NCP4422TG

Onsemi

NCP4422TG by Onsemi

NCP4422TG by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 0.08us turn-on/off time, and 9A peak current limit. Ideal for commercial applications requiring high side drivers in a rectangular flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,363 parts In-Stock

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Vyrian

USA . 920 parts In-Stock

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920

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Kulean Microsystems

USA . 8,185 parts In-Stock

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8,185

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TANS Electronics

Latvia . 7,996 parts In-Stock

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Problanco Electronics

Mexico . 5,669 parts In-Stock

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SupplyDigital Components

Austria . 987 parts In-Stock

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Corphita

USA . 592 parts In-Stock

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UHIMA Technologies

Türkiye . 447 parts In-Stock

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447

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Corohmni

South Africa . 129 parts In-Stock

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Overview

Unleash the power of your electronics with the NCP4422TG MOSFET Gate Driver by Onsemi. Designed for optimal performance and reliability, this high-quality driver is perfect for a wide range of applications. With its advanced technology and commercial-grade temperature grade, customers can trust in the value and benefits it provides. Whether you're looking to enhance the efficiency of your power management system or improve the performance of your electronics, the NCP4422TG offers the perfect solution. Elevate your projects with the superior quality and advantages of Onsemi's MOSFET Gate Drivers today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components, ensuring reliability and durability.

Maximum Supply Voltage: 18 V

The high maximum supply voltage allows for a wide range of applications and compatibility with various systems.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate the gate driver into existing electronic setups and designs.

No. of Terminals: 5

Having 5 terminals provides flexibility in connecting the gate driver to different components within a circuit.

Package Style: FLANGE MOUNT

The flange mount style allows for secure and stable mounting of the gate driver, reducing the risk of damage or disconnection.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures that the gate driver can operate efficiently even in low power scenarios.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows for reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that the gate driver can function effectively in colder environments.

Terminal Position: SINGLE

The single terminal position simplifies the wiring and connection process, making it easier to use and install.

High Side Driver: YES

Having a high side driver allows for efficient and reliable control of high-side power MOSFETs, enhancing overall circuit performance.

Temperature Grade: COMMERCIAL

The commercial temperature grade indicates that the gate driver is suitable for standard commercial applications, making it versatile and widely compatible.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, contributing to the efficiency and reliability of the gate driver.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the PCB assembly process and provides secure connections, enhancing the overall reliability of the gate driver.

Turn-on Time: 0.08 us

The quick turn-on time ensures fast and responsive switching of MOSFETs, improving overall system performance and efficiency.

Nominal Output Peak Current Limit: 9 A

The high peak current limit allows for driving high-power MOSFETs effectively, making the gate driver suitable for demanding applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based interface IC type provides flexibility in driving various types of MOSFETs, enhancing the versatility and compatibility of the gate driver.

Turn-off Time: 0.08 us

The quick turn-off time ensures efficient switching of MOSFETs, reducing power losses and improving overall system performance.

Technical Specifications

MOSFET Gate Drivers NCP4422TG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PSFM-T5

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Peak Current Limit:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.08 us

Turn-on Time:

.08 us

Trade Compliance

NCP4422TG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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