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LM5111-1MYX/NOPB

Texas Instruments

LM5111-1MYX/NOPB by Texas Instruments

LM5111-1MYX/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, 5A output current, and 14V max supply voltage. Ideal for automotive applications, it offers overvoltage protection and operates b/w -40 to 125°C. With a compact design and fast turn-on/off times of 0.04us, it is suitable for various high-performance electronic systems.

Median Price

$1.568

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 60,805 parts In-Stock

1+ parts

$1.837

100+ parts

$1.517

1k+ parts

$0.820

10k+ parts

-

60,805

$1.837

$1.517

$0.820

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DigiKey

USA . 107 parts In-Stock

1+ parts

-

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-

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10k+ parts

$1.300

107

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$1.300

Distributors (In-Stock)

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Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$1.040

100+ parts

-

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42

$1.040

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Digiode

USA . 2,629 parts In-Stock

1+ parts

$1.745

100+ parts

-

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2,629

$1.745

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Vyrian

USA . 60,528 parts In-Stock

1+ parts

-

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60,528

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Chip Stock

USA . 7,000 parts In-Stock

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7,000

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Anansix

USA . 2,672 parts In-Stock

1+ parts

-

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2,672

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,759 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

10k+ parts

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3,759

$0.820

-

-

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Continental Prestige Electronics

USA . 1,609 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

10k+ parts

$0.804

1,609

$0.820

-

-

$0.804

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.951

100+ parts

$0.875

1k+ parts

$0.820

10k+ parts

-

60

$0.951

$0.875

$0.820

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Corphita

USA . 3,690 parts In-Stock

1+ parts

$1.653

100+ parts

-

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3,690

$1.653

-

-

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Parana Technologies

USA . 108 parts In-Stock

1+ parts

$3.357

100+ parts

-

1k+ parts

$3.882

10k+ parts

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108

$3.357

-

$3.882

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Semicontronic

India . 60,610 parts In-Stock

1+ parts

$3.400

100+ parts

$3.315

1k+ parts

$3.298

10k+ parts

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60,610

$3.400

$3.315

$3.298

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Ampacity Inc.

Singapore . 60,353 parts In-Stock

1+ parts

$3.400

100+ parts

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60,353

$3.400

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ChromeModa Solutions

Germany . 4,094 parts In-Stock

1+ parts

$3.772

100+ parts

$3.093

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-

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4,094

$3.772

$3.093

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IDEA Electronic Components Group

UK . 1,822 parts In-Stock

1+ parts

$3.772

100+ parts

-

1k+ parts

$3.395

10k+ parts

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1,822

$3.772

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$3.395

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Corohmni

South Africa . 758 parts In-Stock

1+ parts

$4.332

100+ parts

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758

$4.332

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Component Stockers USA

USA . 49,886 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.880

10k+ parts

$0.880

49,886

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-

$0.880

$0.880

QUARKTWIN TECHNOLOGY LTD

USA . 27,395 parts In-Stock

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27,395

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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A-Z Elektronik GmbH

Germany . 6,384 parts In-Stock

1+ parts

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6,384

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Alle Elektronik GmbH

Germany . 3,845 parts In-Stock

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3,845

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DigiPath Technology Company

USA . 2,266 parts In-Stock

1+ parts

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100+ parts

$3.401

1k+ parts

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10k+ parts

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2,266

-

$3.401

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Overview

Enhance your projects with the LM5111-1MYX/NOPB MOSFET Gate Driver by Texas Instruments, a leading manufacturer known for top-quality electronic components. Ideal for applications requiring precise control and reliable performance, this driver boasts built-in protections against overvoltage, ensuring peace of mind for your designs. With a compact square package design and dual terminal position, this driver offers easy integration and versatility. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations, providing you with the value and innovation you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for long-term use.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage, this gate driver can effectively handle a wide range of applications.

Package Shape: SQUARE

The square package shape offers a compact design for space-saving and efficient PCB layout.

Built-in Protections: OVER VOLTAGE

The built-in overvoltage protection enhances the safety and longevity of the connected MOSFETs.

No. of Terminals: 8

The 8 terminals provide ample connectivity options for versatile circuit configurations.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG

The small outline, heat sink/slug package style ensures effective heat dissipation for optimal performance.

Minimum Supply Voltage: 3.5 V

The low minimum supply voltage allows for compatibility with various power sources.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in harsh conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature provides versatility for use in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and solderability for a reliable connection.

Terminal Position: DUAL

The dual terminal position enhances flexibility in circuit design and integration.

Maximum Seated Height: 1.09 mm

The low maximum seated height contributes to a compact and space-efficient PCB layout.

Width: 3 mm

The 3mm width allows for easy integration into tight spaces or densely packed circuit boards.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering and component integrity during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures reliability during manufacturing processes.

Length: 3 mm

The 3mm length contributes to the compact design and efficient use of space on the PCB.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates suitability for use in automotive applications.

Maximum Output Current: 5 A

With a high maximum output current, this gate driver can effectively drive MOSFETs with high current requirements.

No. of Channels: 2

The 2 channels provide versatility for controlling multiple MOSFETs independently.

Terminal Form: GULL WING

The gull wing terminal form ensures secure attachment to the PCB for reliable performance.

Nominal Supply Voltage: 12 V

The 12V nominal supply voltage is ideal for compatibility with common power sources.

Turn-on Time: 0.04 us

The fast turn-on time ensures quick response and precise control of the connected MOSFETs.

Terminal Pitch: 0.65 mm

The 0.65mm terminal pitch allows for fine-pitch mounting and space-saving layout on the PCB.

Nominal Output Peak Current Limit: 5 A

The 5A nominal output peak current limit ensures safe and reliable operation under high load conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter-based MOSFET driver interface IC type provides compatibility with a variety of control systems.

Turn-off Time: 0.04 us

The fast turn-off time ensures precise switching control for optimal performance.

Output Current Flow Direction: SOURCE AND SINK

The source and sink output current flow direction offers flexibility in driving different types of MOSFETs.

Technical Specifications

MOSFET Gate Drivers LM5111-1MYX/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

OVER VOLTAGE

High Side Driver:

NO

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

5 A

Nominal Output Peak Current Limit:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.09 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

3.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.04 us

Turn-on Time:

.04 us

Width:

3 mm

Trade Compliance

LM5111-1MYX/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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