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NCP4421TG

Onsemi

NCP4421TG by Onsemi

NCP4421TG by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 0.08us turn-on/off time, and 9A peak current limit. Ideal for commercial applications requiring high side drivers in a rectangular package style with flange mount.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,976 parts In-Stock

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Digiode

USA . 1,562 parts In-Stock

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1,562

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Distributors (Availability)

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Kulean Microsystems

USA . 7,691 parts In-Stock

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7,691

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TANS Electronics

Latvia . 2,671 parts In-Stock

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SupplyDigital Components

Austria . 1,864 parts In-Stock

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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463

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Corohmni

South Africa . 443 parts In-Stock

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443

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Corphita

USA . 301 parts In-Stock

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Problanco Electronics

Mexico . 35 parts In-Stock

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Overview

Discover the NCP4421TG MOSFET Gate Driver by Onsemi, a reliable solution for your power management needs. With a maximum supply voltage of 18V and a nominal output peak current limit of 9A, this high side driver offers exceptional performance in a compact rectangular package. Ideal for a wide range of applications, this commercial-grade driver boasts fast turn-on and turn-off times of just 0.08 us, providing efficient and precise control. Trust Onsemi's expertise in semiconductor manufacturing to deliver a quality product that brings value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to environmental factors, making the product reliable for long-term use.

Maximum Supply Voltage: 18 V

Support for a high maximum supply voltage allows for use in a variety of applications without risk of overloading the device.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into existing circuit designs and layouts without requiring major adjustments.

No. of Terminals: 5

Having 5 terminals provides versatility in connecting the device within a circuit, offering multiple options for implementation.

Minimum Supply Voltage: 4.5 V

Low minimum supply voltage ensures efficient operation in low-power applications, contributing to energy savings.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures, increasing the product's reliability and suitability for a wide range of environments.

Minimum Operating Temperature: 0 °C

Ability to operate at low temperatures ensures stable performance even in extreme cold conditions, making it a versatile option for various climates.

High Side Driver: YES

Having a high side driver simplifies circuit designs and improves efficiency, making the product an ideal choice for applications requiring this feature.

Turn-on Time: 0.08 us

Fast turn-on time enhances speed and responsiveness of the device, making it suitable for high-frequency applications that demand quick switching.

Nominal Output Peak Current Limit: 9 A

High nominal output peak current limit ensures robust performance and the ability to handle high current loads, making it suitable for power-intensive applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Buffer or inverter based interface IC type offers flexibility in integrating the driver into different circuit setups, enhancing compatibility and ease of use.

Turn-off Time: 0.08 us

Quick turn-off time complements the fast turn-on time, ensuring efficient switching operations and minimizing power loss, making the product energy-efficient.

Technical Specifications

MOSFET Gate Drivers NCP4421TG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PSFM-T5

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Peak Current Limit:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.08 us

Turn-on Time:

.08 us

Trade Compliance

NCP4421TG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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