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NCP4422P

Onsemi

NCP4422P by Onsemi

NCP4422P by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 9A peak current limit, and 0.08us turn-on/off time. Ideal for industrial applications requiring high side drivers in CMOS technology. Package style: IN-LINE, terminals: 8, temp range: -40 to 85 °C.

Median Price

$1.425

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,642 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

$1.140

10k+ parts

$1.070

13,642

-

$1.270

$1.140

$1.070

DigiKey

USA . 13,642 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.680

10k+ parts

-

13,642

-

-

$1.680

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Verical

USA . 13,642 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.425

10k+ parts

$1.337

13,642

-

-

$1.425

$1.337

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,292 parts In-Stock

1+ parts

$1.150

100+ parts

-

1k+ parts

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2,292

$1.150

-

-

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Digiode

USA . 477 parts In-Stock

1+ parts

$1.349

100+ parts

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477

$1.349

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-

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DigiKey Marketplace

USA . 13,642 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

-

10k+ parts

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13,642

-

$1.480

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 133 parts In-Stock

1+ parts

$1.150

100+ parts

-

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133

$1.150

-

-

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Corphita

USA . 1,221 parts In-Stock

1+ parts

$1.278

100+ parts

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1,221

$1.278

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Vigor

Singapore . 160 parts In-Stock

1+ parts

$1.360

100+ parts

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160

$1.360

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-

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Continental Prestige Electronics

USA . 13,642 parts In-Stock

1+ parts

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100+ parts

$1.150

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13,642

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$1.150

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SupplyDigital Components

Austria . 7,041 parts In-Stock

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7,041

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Kulean Microsystems

USA . 4,205 parts In-Stock

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4,205

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Problanco Electronics

Mexico . 3,081 parts In-Stock

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3,081

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TANS Electronics

Latvia . 1,177 parts In-Stock

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1,177

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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440

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Overview

Enhance the performance of your electronic devices with the NCP4422P MOSFET Gate Driver by Onsemi. With a focus on quality and reliability, Onsemi is a trusted manufacturer known for delivering innovative solutions in the semiconductor industry. The NCP4422P offers superior power management capabilities, making it ideal for a wide range of applications. Experience faster response times and improved efficiency with this versatile and high-performance gate driver. Upgrade your electronic design with the NCP4422P today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for various applications while also ensuring longevity.

Maximum Supply Voltage: 18 V

With a high maximum supply voltage, this MOSFET gate driver can handle a wide range of power sources, providing flexibility in system design.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage allows the driver to operate efficiently even with lower power sources, making it versatile for different environments.

Turn-on Time: 0.08 us

The fast turn-on time ensures quick response and efficient switching of the MOSFET, improving overall system performance.

Nominal Output Peak Current Limit: 9 A

With a high peak current limit, this driver can effectively drive MOSFETs with higher current requirements, making it suitable for demanding applications.

Technical Specifications

MOSFET Gate Drivers NCP4422P attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.78 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

4.5/18

Qualification:

Not Qualified

Maximum Seated Height:

4.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.08 us

Turn-on Time:

.08 us

Width:

7.62 mm

Trade Compliance

NCP4422P Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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