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NCP4413DR2

Onsemi

NCP4413DR2 by Onsemi

NCP4413DR2 by Onsemi is a MOSFET gate driver with 16V max supply voltage, 4.5V min supply voltage, and 3A output peak current limit. It is ideal for industrial applications requiring high side drivers with fast turn-on/off times of 0.05 us and operates in temperatures ranging from -40 to 85 °C.

Median Price

$0.603

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 53,256 parts In-Stock

1+ parts

-

100+ parts

$0.581

1k+ parts

$0.482

10k+ parts

$0.430

53,256

-

$0.581

$0.482

$0.430

DigiKey

USA . 53,256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.730

10k+ parts

-

53,256

-

-

$0.730

-

Verical

USA . 53,256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.603

10k+ parts

$0.538

53,256

-

-

$0.603

$0.538

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,773 parts In-Stock

1+ parts

$0.388

100+ parts

-

1k+ parts

-

10k+ parts

-

1,773

$0.388

-

-

-

Digiode

USA . 2,254 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

-

10k+ parts

-

2,254

$0.453

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 478 parts In-Stock

1+ parts

$0.388

100+ parts

-

1k+ parts

-

10k+ parts

-

478

$0.388

-

-

-

Corphita

USA . 1,113 parts In-Stock

1+ parts

$0.429

100+ parts

-

1k+ parts

-

10k+ parts

-

1,113

$0.429

-

-

-

Vigor

Singapore . 237 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

-

10k+ parts

-

237

$0.460

-

-

-

Continental Prestige Electronics

USA . 53,256 parts In-Stock

1+ parts

-

100+ parts

$0.388

1k+ parts

-

10k+ parts

-

53,256

-

$0.388

-

-

Problanco Electronics

Mexico . 7,088 parts In-Stock

1+ parts

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100+ parts

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7,088

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SupplyDigital Components

Austria . 6,355 parts In-Stock

1+ parts

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100+ parts

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6,355

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-

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TANS Electronics

Latvia . 4,898 parts In-Stock

1+ parts

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100+ parts

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4,898

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Kulean Microsystems

USA . 530 parts In-Stock

1+ parts

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100+ parts

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530

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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21

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Overview

Unleash the power of your electronics with the high-quality NCP4413DR2 MOSFET Gate Driver by Onsemi. Designed for industrial applications, this small outline package offers a wide operating temperature range and peak output current limit of 3A, providing reliable performance in demanding environments. Trust Onsemi's expertise in CMOS technology to deliver a superior product that enhances the efficiency and reliability of your systems. Upgrade today and experience the benefits of seamless power management with the NCP4413DR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Surface Mount: YES

Being surface mountable, this product is easy to install on PCBs, saving space and enabling efficient assembly processes.

Maximum Supply Voltage: 16 V

With a high maximum supply voltage of 16V, this product can handle a wide range of power supply requirements.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage of 4.5V ensures compatibility with various power sources, making it versatile for different applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows the product to operate reliably in harsh environments without overheating.

Technology: CMOS

The CMOS technology used in this product ensures low power consumption and high noise immunity, making it efficient and reliable in operation.

Turn-on Time: 0.05 us

The fast turn-on time of 0.05 microseconds ensures quick and efficient switching of the MOSFETs, improving the overall performance of the system.

Nominal Output Peak Current Limit: 3 A

With a high nominal output peak current limit of 3A, this product can drive high-power MOSFETs effectively, making it suitable for demanding applications.

Technical Specifications

MOSFET Gate Drivers NCP4413DR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

4.5/16

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

3.9 mm

Trade Compliance

NCP4413DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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