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NCP4330DR2G

Onsemi

NCP4330DR2G by Onsemi

NCP4330DR2G by Onsemi is a MOSFET Gate Driver with 10V power supply, suitable for automotive applications. It features high side driver, operates b/w -40 to 125 °C, and has a small outline package style. Ideal for driving MOSFETs in various electronic systems requiring precise voltage control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,048 parts In-Stock

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Digiode

USA . 1,906 parts In-Stock

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AZTECH Wire

Italy . 1,220 parts In-Stock

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SupplyDigital Components

Austria . 6,317 parts In-Stock

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Kulean Microsystems

USA . 4,956 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,410 parts In-Stock

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Kepictronics

USA . 3,061 parts In-Stock

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Futuretech Components

Singapore . 2,541 parts In-Stock

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Problanco Electronics

Mexico . 2,432 parts In-Stock

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Corphita

USA . 2,081 parts In-Stock

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UHIMA Technologies

Türkiye . 637 parts In-Stock

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Microchip USA

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Overview

Elevate your power management systems with the NCP4330DR2G by Onsemi, a top-tier MOSFET gate driver designed for automotive applications. Onsemi's reputation for quality and reliability shines through in this compact and versatile device, offering customers unmatched performance and efficiency. With a wide operating temperature range and high side driver capability, this gate driver provides exceptional value and benefits to meet your power control needs. Upgrade your designs with the NCP4330DR2G and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the MOSFET gate driver lightweight and durable, making it suitable for various applications.

Surface Mount: YES

Being surface mountable, this product can be easily integrated onto circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 10

With a power supply of 10V, this MOSFET gate driver can efficiently drive MOSFETs within the specified voltage range for optimal performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows this gate driver to function reliably even in elevated temperature environments.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets the stringent reliability and performance standards required in automotive systems.

Technical Specifications

MOSFET Gate Drivers NCP4330DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

NCP4330DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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