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NCP4420DR2G

Onsemi

NCP4420DR2G by Onsemi

NCP4420DR2G by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 0.1us turn-on/off time. Ideal for industrial applications, it features 6A peak current limit, CMOS technology, and GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,012 parts In-Stock

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Vyrian

USA . 1,891 parts In-Stock

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TANS Electronics

Latvia . 8,024 parts In-Stock

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Kulean Microsystems

USA . 5,403 parts In-Stock

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Problanco Electronics

Mexico . 3,003 parts In-Stock

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Corphita

USA . 1,176 parts In-Stock

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SupplyDigital Components

Austria . 917 parts In-Stock

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Enhance the performance of your electronic designs with the NCP4420DR2G MOSFET Gate Driver by Onsemi. Crafted with precision and expertise, this small outline package delivers high output peak current limit of 6A, ensuring efficient operation in industrial environments. With its fast turn-on and turn-off times, this driver seamlessly controls your MOSFETs for optimal performance. Ideal for a wide range of applications, from power supplies to motor controls, the NCP4420DR2G offers unparalleled reliability and quality that will elevate your projects to new heights. Trust Onsemi for cutting-edge technology that empowers your innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is known for its durability and resistance to heat, making the product suitable for high temperature industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing manufacturing complexity.

Maximum Supply Voltage: 18 V

Support for high supply voltage ensures compatibility with a wide range of power sources, making the product versatile in various applications.

Minimum Supply Voltage: 4.5 V

Low minimum supply voltage requirement enables operation in systems with limited power resources, enhancing efficiency and reliability.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance enables the product to function reliably in harsh environments without risk of overheating.

Width: 3.9 mm

Compact width dimension allows for efficient use of board space, ideal for applications with limited area for components.

High Side Driver: YES

Inclusion of high side driver functionality simplifies circuit design and enhances performance in applications where high side switching is required.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to energy efficiency and signal integrity in the product.

Nominal Output Peak Current Limit: 6 A

High output current limit capability supports driving power-hungry MOSFETs with ease, ensuring reliable operation under high load conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Versatile interface IC type provides flexibility in driving different types of MOSFETs, accommodating a wide range of applications and requirements.

Technical Specifications

MOSFET Gate Drivers NCP4420DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

3.9 mm

Trade Compliance

NCP4420DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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