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NCP434FCT2G

Onsemi

NCP434FCT2G by Onsemi

NCP434FCT2G by Onsemi is a MOSFET Gate Driver with 3.6V max supply voltage, 2A max output current, and 190us turn-on time. Ideal for industrial applications requiring high side drivers in a compact grid array package with very thin profile.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 356,038 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

356,038

-

$0.251

$0.208

$0.186

DigiKey

USA . 356,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.310

10k+ parts

-

356,038

-

-

$0.310

-

Farnell

UK . 356,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.283

356,038

-

-

-

$0.283

Verical

USA . 356,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.232

356,038

-

-

-

$0.232

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 191 parts In-Stock

1+ parts

$0.196

100+ parts

-

1k+ parts

-

10k+ parts

-

191

$0.196

-

-

-

Vyrian

USA . 4,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,104

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 331 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

331

$0.185

-

-

-

Vigor

Singapore . 579 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

-

579

$0.200

-

-

-

Corohmni

South Africa . 437 parts In-Stock

1+ parts

$0.206

100+ parts

-

1k+ parts

-

10k+ parts

-

437

$0.206

-

-

-

AZTECH Wire

Italy . 802 parts In-Stock

1+ parts

$20.880

100+ parts

-

1k+ parts

-

10k+ parts

-

802

$20.880

-

-

-

Continental Prestige Electronics

USA . 356,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.283

10k+ parts

-

356,038

-

-

$0.283

-

TANS Electronics

Latvia . 6,326 parts In-Stock

1+ parts

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100+ parts

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6,326

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Problanco Electronics

Mexico . 3,829 parts In-Stock

1+ parts

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100+ parts

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3,829

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SupplyDigital Components

Austria . 3,282 parts In-Stock

1+ parts

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3,282

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Kulean Microsystems

USA . 1,716 parts In-Stock

1+ parts

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1,716

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Microchip USA

USA . 470 parts In-Stock

1+ parts

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470

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UHIMA Technologies

Türkiye . 281 parts In-Stock

1+ parts

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100+ parts

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281

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Overview

Experience unparalleled performance and reliability with the NCP434FCT2G MOSFET Gate Driver by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are ideal for a wide range of applications. This compact and versatile driver offers customers exceptional value with its high side driver capability, quick turn-on time, and industrial-grade temperature rating. Say goodbye to worrying about power supplies with the NCP434FCT2G - a game-changer in the world of MOSFET gate drivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the gate driver.

Surface Mount: YES

Easy installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 3.6 V

Allows for compatibility with a wide range of power supplies, increasing versatility in applications.

Package Shape: SQUARE

Compact design that helps save space on the circuit board.

Power Supplies (V): 1/3.6

Flexibility in power supply options, accommodating different voltage requirements.

No. of Terminals: 4

Simplifies connection to the circuit, making installation easier.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Enhanced performance and reliability due to the advanced package style.

Minimum Supply Voltage: 1 V

Can operate at low voltage levels, increasing efficiency and saving energy.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with higher temperature requirements, ensuring reliable operation.

Minimum Operating Temperature: -40 °C

Can withstand cold temperatures, expanding the range of operating environments.

Terminal Position: BOTTOM

Facilitates better heat dissipation and electrical connections.

Maximum Seated Height: 0.63 mm

Low profile design for space-constrained applications.

Width: 0.96 mm

Compact size that saves space on the circuit board.

High Side Driver: YES

Allows for driving power MOSFETs in high side applications, expanding the range of possible circuits.

Length: 0.96 mm

Compact size that saves space on the circuit board.

Temperature Grade: INDUSTRIAL

Designed for high-temperature industrial environments, ensuring reliable performance.

Maximum Output Current: 2 A

Capability to deliver higher current, suitable for driving MOSFETs in demanding applications.

Terminal Form: BALL

Improved connectivity and reliability compared to other terminal forms.

Nominal Supply Voltage: 3.3 V

Compatible with common power supply voltages, making it versatile in various applications.

Turn-on Time: 190 us

Fast response time for quick switching of MOSFETs, improving overall performance.

Terminal Pitch: 0.5 mm

Fine pitch design for precise connections and enhanced reliability.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Various interface options for different gate driver requirements, offering flexibility in circuit design.

Technical Specifications

MOSFET Gate Drivers NCP434FCT2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Driver No. of Bits:

1

High Side Driver:

YES

JESD-30 Code:

S-PBGA-B4

Length:

.96 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA4,2X2,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.63 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-on Time:

190 us

Width:

.96 mm

Trade Compliance

NCP434FCT2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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