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NCP4413P

Onsemi

NCP4413P by Onsemi

NCP4413P by Onsemi is a MOSFET Gate Driver with 16V max supply voltage, 4.5V min supply voltage, and 3A output peak current limit. It is ideal for industrial applications requiring high side drivers with 0.05us turn-on/off time. The driver comes in an 8-terminal rectangular package style suitable for CMOS technology.

Median Price

$0.603

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,512 parts In-Stock

1+ parts

-

100+ parts

$0.581

1k+ parts

$0.482

10k+ parts

$0.430

3,512

-

$0.581

$0.482

$0.430

DigiKey

USA . 3,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.730

10k+ parts

-

3,512

-

-

$0.730

-

Verical

USA . 3,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.603

10k+ parts

$0.538

3,512

-

-

$0.603

$0.538

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,677 parts In-Stock

1+ parts

$0.388

100+ parts

-

1k+ parts

-

10k+ parts

-

1,677

$0.388

-

-

-

Digiode

USA . 573 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

-

10k+ parts

-

573

$0.453

-

-

-

DigiKey Marketplace

USA . 3,512 parts In-Stock

1+ parts

-

100+ parts

$0.500

1k+ parts

-

10k+ parts

-

3,512

-

$0.500

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 291 parts In-Stock

1+ parts

$0.388

100+ parts

-

1k+ parts

-

10k+ parts

-

291

$0.388

-

-

-

Corphita

USA . 650 parts In-Stock

1+ parts

$0.429

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.429

-

-

-

Vigor

Singapore . 214 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

-

10k+ parts

-

214

$0.460

-

-

-

Problanco Electronics

Mexico . 7,299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,299

-

-

-

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SupplyDigital Components

Austria . 6,834 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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6,834

-

-

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TANS Electronics

Latvia . 6,375 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,375

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-

-

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Continental Prestige Electronics

USA . 3,512 parts In-Stock

1+ parts

-

100+ parts

$0.388

1k+ parts

-

10k+ parts

-

3,512

-

$0.388

-

-

UHIMA Technologies

Türkiye . 238 parts In-Stock

1+ parts

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100+ parts

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238

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Kulean Microsystems

USA . 201 parts In-Stock

1+ parts

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100+ parts

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201

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-

Overview

Unleash the power of your electronics with the NCP4413P MOSFET Gate Driver by Onsemi. Crafted with precision and expertise, this high-quality driver offers unrivaled performance and reliability. Ideal for a wide range of applications, this product delivers exceptional value and benefits to customers seeking efficiency and effectiveness in their designs. Experience seamless operation and enhanced control with the NCP4413P, setting new standards for excellence in the industry. Choose Onsemi for superior quality and innovation that transforms your projects into success stories.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Supply Voltage: 16 V

The high maximum supply voltage allows for versatile use in different circuit designs without risking voltage overload.

Power Supplies (V): 4.5/16

The availability of power supplies from 4.5V to 16V provides flexibility in powering the device in different operating conditions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the device can withstand elevated temperatures during operation, ensuring reliability.

Nominal Output Peak Current Limit: 3 A

The high nominal output peak current limit of 3A allows the device to handle heavy loads and provide efficient performance.

Turn-on Time: 0.05 us

The fast turn-on time of 0.05 microseconds ensures quick response and precise control of the MOSFET switching, enhancing overall system efficiency.

Technical Specifications

MOSFET Gate Drivers NCP4413P attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.78 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

4.5/16

Qualification:

Not Qualified

Maximum Seated Height:

4.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

7.62 mm

Trade Compliance

NCP4413P Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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