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NCP4420DR2

Onsemi

NCP4420DR2 by Onsemi

NCP4420DR2 by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 6A peak current limit, and 0.1us turn-on/off time. Ideal for industrial applications requiring high side drivers in compact spaces due to its small outline package style.

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 19,905 parts In-Stock

1+ parts

-

100+ parts

$0.608

1k+ parts

$0.504

10k+ parts

$0.450

19,905

-

$0.608

$0.504

$0.450

DigiKey

USA . 19,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.760

10k+ parts

-

19,905

-

-

$0.760

-

Verical

USA . 19,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

$0.562

19,905

-

-

$0.630

$0.562

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 237 parts In-Stock

1+ parts

$0.403

100+ parts

-

1k+ parts

-

10k+ parts

-

237

$0.403

-

-

-

Digiode

USA . 1,509 parts In-Stock

1+ parts

$0.473

100+ parts

-

1k+ parts

-

10k+ parts

-

1,509

$0.473

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 271 parts In-Stock

1+ parts

$0.403

100+ parts

-

1k+ parts

-

10k+ parts

-

271

$0.403

-

-

-

Corphita

USA . 1,744 parts In-Stock

1+ parts

$0.448

100+ parts

-

1k+ parts

-

10k+ parts

-

1,744

$0.448

-

-

-

Vigor

Singapore . 217 parts In-Stock

1+ parts

$0.480

100+ parts

-

1k+ parts

-

10k+ parts

-

217

$0.480

-

-

-

Continental Prestige Electronics

USA . 21,855 parts In-Stock

1+ parts

-

100+ parts

$0.403

1k+ parts

-

10k+ parts

-

21,855

-

$0.403

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 7,379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,379

-

-

-

-

SupplyDigital Components

Austria . 4,643 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,643

-

-

-

-

TANS Electronics

Latvia . 3,147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,147

-

-

-

-

Problanco Electronics

Mexico . 2,549 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,549

-

-

-

-

Kulean Microsystems

USA . 1,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,900

-

-

-

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UHIMA Technologies

Türkiye . 893 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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893

-

-

-

-

Overview

Discover the NCP4420DR2 by Onsemi, a high-quality MOSFET Gate Driver offering reliable performance and durability. Manufactured by Onsemi, a trusted name in semiconductor technology, this product is perfect for a wide range of applications. With a maximum supply voltage of 18V and turn-on/off times of 0.1us, this driver ensures efficient operation and precise control. Upgrade your project with the NCP4420DR2 and experience the superior value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties, making the product safe to use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs.

Maximum Supply Voltage: 18 V

Can handle a high maximum supply voltage, providing flexibility in different applications.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into existing circuit designs.

Power Supplies (V): 4.5/18

Supports a wide range of power supplies, making it versatile for various applications.

No. of Terminals: 8

Having 8 terminals allows for multiple connections and configurations.

Maximum Seated Height: 1.75 mm

Low seated height allows for compact designs and space-saving installations.

High Side Driver: YES

Includes a high side driver, enabling control of high-side MOSFETs in the circuit.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Nominal Output Peak Current Limit: 6 A

Capable of handling high peak currents, suitable for demanding applications.

Technical Specifications

MOSFET Gate Drivers NCP4420DR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

4.5/18

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

3.9 mm

Trade Compliance

NCP4420DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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