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NCP4421P

Onsemi

NCP4421P by Onsemi

NCP4421P by Onsemi is a MOSFET Gate Driver with 18V max supply voltage, 9A peak current limit, and 0.08us turn-on/off time. Ideal for industrial applications requiring high side drivers in CMOS technology. Package style: IN-LINE, terminals: 8, temp range: -40 to 85 °C.

Median Price

$1.425

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,319 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

$1.140

10k+ parts

$1.070

14,319

-

$1.270

$1.140

$1.070

DigiKey

USA . 14,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.680

10k+ parts

-

14,319

-

-

$1.680

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Verical

USA . 14,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.425

10k+ parts

$1.337

14,319

-

-

$1.425

$1.337

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,260 parts In-Stock

1+ parts

$1.150

100+ parts

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2,260

$1.150

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Digiode

USA . 1,083 parts In-Stock

1+ parts

$1.349

100+ parts

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10k+ parts

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1,083

$1.349

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DigiKey Marketplace

USA . 14,319 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

-

10k+ parts

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14,319

-

$1.480

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 190 parts In-Stock

1+ parts

$1.150

100+ parts

-

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190

$1.150

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Corphita

USA . 1,140 parts In-Stock

1+ parts

$1.278

100+ parts

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1,140

$1.278

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Vigor

Singapore . 194 parts In-Stock

1+ parts

$1.360

100+ parts

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194

$1.360

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QUARKTWIN TECHNOLOGY LTD

USA . 17,806 parts In-Stock

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17,806

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Continental Prestige Electronics

USA . 14,319 parts In-Stock

1+ parts

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100+ parts

$1.150

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14,319

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$1.150

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TANS Electronics

Latvia . 6,958 parts In-Stock

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6,958

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SupplyDigital Components

Austria . 6,288 parts In-Stock

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6,288

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Problanco Electronics

Mexico . 6,244 parts In-Stock

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Kulean Microsystems

USA . 655 parts In-Stock

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655

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UHIMA Technologies

Türkiye . 44 parts In-Stock

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Overview

Enhance the performance of your electronic designs with the NCP4421P MOSFET Gate Driver by Onsemi. Known for their superior quality and reliability, Onsemi brings you a product that offers seamless integration and enhanced efficiency. Ideal for a wide range of applications, this gate driver provides exceptional value and benefits to customers looking to optimize their systems. Experience the advantage of faster turn-on and turn-off times, increased output peak current limit, and industrial-grade temperature stability. Upgrade your projects with the NCP4421P and unleash the full potential of your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the integrated circuit within, making it ideal for industrial applications where reliability is crucial.

Maximum Supply Voltage: 18 V

With a high maximum supply voltage of 18 V, this MOSFET gate driver can handle a wide range of input voltages, offering flexibility in various circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic systems, contributing to efficient PCB layout designs.

Power Supplies (V): 4.5/18

The wide range of power supply voltage support (4.5 V to 18 V) enables compatibility with different power sources and offers flexibility in system design.

No. of Terminals: 8

With 8 terminals available, this MOSFET gate driver provides multiple connection points for interfacing with other components, allowing for versatile applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding industrial environments with elevated temperatures.

Technology: CMOS

Utilizing CMOS technology, this MOSFET gate driver offers high speed, low power consumption, and compatibility with a wide range of digital circuits, making it a versatile choice for various applications.

Technical Specifications

MOSFET Gate Drivers NCP4421P attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.78 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

4.5/18

Qualification:

Not Qualified

Maximum Seated Height:

4.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.08 us

Turn-on Time:

.08 us

Width:

7.62 mm

Trade Compliance

NCP4421P Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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