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MMBD452LT1

Onsemi

MMBD452LT1 by Onsemi

MMBD452LT1 by Onsemi is a microwave mixer & detector diode with 2 elements in series connected configuration. It operates in very high frequency to ultra high frequency bands, with max diode capacitance of 1.5 pF. This small outline package diode is ideal for applications requiring Schottky technology and can handle up to 0.225 W power dissipation at a max operating temperature of 125 °C.

Median Price

$0.718

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 2,995 parts In-Stock

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$0.718

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$0.753

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$0.710

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$0.718

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Chip Stock

USA . 11,179 parts In-Stock

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Inventory MP

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Bristol Electronics

USA . 4,694 parts In-Stock

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EMSNET

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Digiode

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Corohmni

South Africa . 251 parts In-Stock

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Component Stockers USA

USA . 429 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,057 parts In-Stock

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SupplyDigital Components

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Overview

Enhance your electronic projects with the MMBD452LT1 by Onsemi, a top-quality microwave mixer and detector diode that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader known for producing cutting-edge components, this diode offers a wide range of applications from very high frequency to ultra-high frequency. With a small outline package style and dual terminal position, this diode is easy to integrate into your designs. Experience the value and benefits of using the MMBD452LT1 in your projects, whether you're working on communication systems, radar systems, or other electronic applications. Trust in the quality and innovation that Onsemi brings to the table with this versatile diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight and durable package for easy handling and protection of the diodes.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap and 2 elements allows for more precise mixing and detection of signals, enhancing performance.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Support for very high frequency to ultra high frequency bands makes this product versatile and suitable for a wide range of applications.

Surface Mount: YES

Surface mount capability enables easy and convenient integration onto circuit boards, saving space and simplifying assembly.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance ensures minimal interference and distortion in signal processing, resulting in high-quality performance.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and compact arrangement of the diodes, optimizing space utilization in electronic systems.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and allows for various configurations to suit different requirements.

Package Style (Meter): SMALL OUTLINE

Small outline package style is space-saving and suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C ensures reliable performance even under demanding conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish offers good solderability and ensures stable electrical connections for consistent performance.

Terminal Position: DUAL

Dual terminal position provides options for different circuit layouts and facilitates easy integration into various systems.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 Watts, this product can handle high power levels without compromising performance.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C allows for efficient soldering and bonding of the diodes to the circuit board.

Diode Type: MIXER DIODE

Specifically designed as mixer diodes for high-frequency applications, ensuring optimal performance in signal mixing and detection.

Technology: SCHOTTKY

Utilizing Schottky technology ensures fast response times and low forward voltage drop, enhancing the efficiency of signal processing.

Terminal Form: GULL WING

Gull wing terminal form enables easy installation and soldering onto circuit boards, improving the overall reliability of the product.

No. of Elements: 2

Having 2 diode elements allows for enhanced signal processing capabilities, enabling more advanced functions and applications.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability for consistent operation in various operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD452LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD452LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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