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BAR19-B2

STMicroelectronics

BAR19-B2 by STMicroelectronics

STMicroelectronics' BAR19-B2 is a single-config microwave mixer diode with ultra-high frequency band. Featuring 1 pF diode capacitance and 0.25 uA reverse current, it operates at up to 125 °C. Ideal for applications requiring high-speed signal mixing in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,591 parts In-Stock

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1,591

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Vyrian

USA . 678 parts In-Stock

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Anansix

USA . 616 parts In-Stock

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616

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 854 parts In-Stock

1+ parts

$0.025

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$0.022

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854

$0.025

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$0.022

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MKK Technologies

India . 1,732 parts In-Stock

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$0.047

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$0.047

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DigiPath Technology Company

USA . 1,732 parts In-Stock

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$0.047

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1,732

$0.047

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Native Components

USA . 591 parts In-Stock

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$0.892

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591

$0.892

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Northwest PG Solutions

USA . 2,332 parts In-Stock

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$0.981

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2,332

$0.981

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Corphita

USA . 4,393 parts In-Stock

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Parana Technologies

USA . 882 parts In-Stock

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$0.030

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882

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$0.030

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Overview

Elevate your microwave applications with the BAR19-B2 by STMicroelectronics. Crafted with precision and expertise by a trusted manufacturer, this ultra-high frequency mixer diode offers unparalleled performance and reliability. With a maximum forward voltage of 0.6V and a minimum breakdown voltage of 4V, this diode ensures optimal efficiency and power output. Whether you're working on radar systems, communication devices, or satellite technology, the BAR19-B2 provides the value, benefits, and advantages you need to take your projects to the next level. Choose quality. Choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: GLASS

Glass is a durable and heat-resistant material, ensuring that the diode is protected and has a long lifespan.

Config: SINGLE

Single configuration makes the diode easy to integrate into circuit designs and reduces complexity.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high-speed data processing and communication.

Maximum Diode Capacitance: 1 pF

Low diode capacitance helps in achieving fast response times and minimizing signal loss.

Maximum Reverse Current: 0.25 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: ROUND

Round shape allows for easy handling and installation in various circuit setups.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces chances of wiring errors.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and stability to the diode during operation.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance ensures reliable performance under various environmental conditions.

Terminal Position: AXIAL

Axial terminal position makes it easier to mount the diode securely on circuit boards.

Case Connection: ISOLATED

Isolated case connection ensures no interference from external sources, enhancing signal accuracy.

Minimum Breakdown Voltage: 4 V

Having a minimum breakdown voltage of 4V protects the diode from potential voltage spikes.

Diode Type: MIXER DIODE

Designed specifically for mixer applications, ensuring optimal performance in mixing signals.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop minimizes power consumption and heat dissipation during operation.

Maximum Output Current: 30 A

High output current capacity allows for handling of large signal loads without distortion.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low power loss, ideal for high-frequency applications.

Terminal Form: WIRE

Wire terminal form offers easy connection and secure attachment to circuit components.

Diode Element Material: SILICON

Silicon diode material is known for its high efficiency and reliability in electronic devices.

Technical Specifications

Microwave Mixer & Detector Diodes BAR19-B2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

4 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.25 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR19-B2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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