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MCH3408

Onsemi

MCH3408 by Onsemi

MCH3408 by Onsemi is a N-CHANNEL FET with 1.4A max drain current and 0.8W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating at up to 150 °C, it offers enhanced performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,878 parts In-Stock

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Vyrian

USA . 1,641 parts In-Stock

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Kulean Microsystems

USA . 6,906 parts In-Stock

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TANS Electronics

Latvia . 5,214 parts In-Stock

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Problanco Electronics

Mexico . 1,692 parts In-Stock

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Corphita

USA . 1,303 parts In-Stock

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UHIMA Technologies

Türkiye . 599 parts In-Stock

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SupplyDigital Components

Austria . 566 parts In-Stock

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Corohmni

South Africa . 221 parts In-Stock

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Overview

Upgrade your power management solutions with the MCH3408 by Onsemi. As a leading manufacturer of Power Field Effect Transistors, Onsemi delivers top-notch quality and reliability in every product. The MCH3408, with its N-CHANNEL design and SINGLE configuration, offers enhanced performance and efficiency for a wide range of applications. From consumer electronics to industrial automation, this transistor provides maximum drain current of 1.4 A and a power dissipation of 0.8 W, ensuring optimal functionality even in demanding environments. Trust Onsemi's expertise and choose the MCH3408 for superior power control and reliability.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high efficiency and low on-resistance, making them a preferred choice for power applications.

Configuration: SINGLE

SINGLE configuration FETs are simpler to design with and more straightforward to use in circuits, making them a reliable choice for various applications.

Surface Mount: YES

Surface mount FETs are easier to integrate onto circuit boards, saving space and allowing for more compact electronic designs.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE FETs can be easily turned on and off by applying a gate voltage, providing better control and efficiency in power applications.

Maximum Drain Current (Abs) (ID): 1.4 A

With a high maximum drain current, this FET can handle larger loads and deliver more power, making it suitable for various power applications.

Maximum Power Dissipation (Abs): 0.8 W

With a high maximum power dissipation rating, this FET can effectively handle heat dissipation and operate reliably under demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer good performance, low power consumption, and high efficiency, making them a popular choice for power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures and operate reliably in various environments.

Technical Specifications

Power Field Effect Transistors (FET) MCH3408 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.4 A

Maximum Drain Current (ID):

1.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

MCH3408 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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