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MC10H117MG

Onsemi

MC10H117MG by Onsemi

MC10H117MG by Onsemi is a Logic Gates IC with 2 functions and 5 inputs. It has a fast propagation delay of 1.35 ns at -5.2V, suitable for high-speed applications in commercial extended temperature environments. The small outline package with gull wing terminals makes it ideal for surface mount designs requiring compact dimensions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Rochester

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Vyrian

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Digiode

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AZTECH Wire

Italy . 919 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,659 parts In-Stock

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Kulean Microsystems

USA . 7,258 parts In-Stock

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TANS Electronics

Latvia . 6,149 parts In-Stock

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Problanco Electronics

Mexico . 5,528 parts In-Stock

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SupplyDigital Components

Austria . 4,543 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 218 parts In-Stock

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Microchip USA

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Overview

Elevate your electronics with the MC10H117MG by Onsemi, a high-quality logic gate that offers unrivaled performance and reliability. Designed by a trusted manufacturer, this compact yet powerful component boasts a fast propagation delay of just 1.5 ns, making it ideal for applications where speed is crucial. With its advanced technology and durable construction, the MC10H117MG delivers unmatched value and benefits to customers seeking top-notch logic gates for their projects. Upgrade your designs with this versatile solution today and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 1.5 ns

Low propagation delay allows for fast and efficient signal processing within the logic gates.

Surface Mount: YES

Easy installation on circuit boards, saving time and effort during assembly.

No. of Inputs: 5

Offers versatility and flexibility in the types of signals that can be processed by the logic gates.

Nominal Supply Voltage / Vsup (V): -5.2

Compatible with standard supply voltages, making integration into existing systems seamless.

Technology: ECL

Utilizes Emitter-Coupled Logic technology for high-speed and low-power operation, ideal for applications requiring fast signal processing.

Technical Specifications

Logic Gates MC10H117MG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

10H

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.2 mm

Logic IC Type:

No. of Functions:

2

No. of Inputs:

5

No. of Terminals:

16

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

1.5 ns

Propagation Delay (tpd):

1.35 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2.05 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

-5.46 V

Minimum Supply Voltage (Vsup):

-4.94 V

Nominal Supply Voltage / Vsup (V):

-5.2

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.275 mm

Trade Compliance

MC10H117MG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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