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MC100EP01DTR2G

Onsemi

MC100EP01DTR2G by Onsemi

MC100EP01DTR2G by Onsemi is a Logic Gate with 4 inputs, 0.35 ns propagation delay, and 3.3V nominal voltage. Ideal for high-speed applications in industrial settings due to its ECL technology and -40 to 85 °C operating temperature range. Package style is small outline with dual terminals and gull wing form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,367 parts In-Stock

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Digiode

USA . 2,098 parts In-Stock

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AZTECH Wire

Italy . 689 parts In-Stock

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$9.480

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Problanco Electronics

Mexico . 5,337 parts In-Stock

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Microchip USA

USA . 4,746 parts In-Stock

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Kulean Microsystems

USA . 4,573 parts In-Stock

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SupplyDigital Components

Austria . 3,744 parts In-Stock

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TANS Electronics

Latvia . 1,820 parts In-Stock

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Corphita

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Corohmni

South Africa . 427 parts In-Stock

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Overview

Unlock the power of high-speed data processing with the MC100EP01DTR2G logic gate by Onsemi. Crafted with precision and reliability in mind, this cutting-edge component offers unparalleled performance in a compact package. Ideal for applications requiring lightning-fast signal processing, this logic gate is a game-changer for industries seeking to optimize efficiency and streamline operations. Elevate your projects with the superior quality and exceptional value of the MC100EP01DTR2G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the logic gates, increasing the longevity of the product.

Propagation Delay At Nominal Supply: 0.35 ns

The low propagation delay ensures fast processing speed, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes it easier to integrate this product onto circuit boards, saving space and potentially reducing overall system size.

Nominal Supply Voltage / Vsup (V): 3.3

Having a low supply voltage requirement can help in reducing power consumption and heat generation, making it energy-efficient.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range allows this product to be used in a variety of environments without performance degradation.

Technical Specifications

Logic Gates MC100EP01DTR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

100E

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Inputs:

4

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

38 mA

Propagation Delay At Nominal Supply:

.35 ns

Propagation Delay (tpd):

.33 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

MC100EP01DTR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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