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LC898113

Onsemi

LC898113 by Onsemi

The Onsemi LC898113 is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -30 to 85 °C with supply voltage range of 2.7V to 3.6V. This IC, in GRID ARRAY package style, is ideal for applications requiring high performance and compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 926 parts In-Stock

1+ parts

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926

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Digiode

USA . 644 parts In-Stock

1+ parts

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644

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 483 parts In-Stock

1+ parts

$48.412

100+ parts

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1k+ parts

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483

$48.412

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TANS Electronics

Latvia . 6,994 parts In-Stock

1+ parts

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6,994

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SupplyDigital Components

Austria . 6,669 parts In-Stock

1+ parts

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6,669

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Kulean Microsystems

USA . 6,385 parts In-Stock

1+ parts

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6,385

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Problanco Electronics

Mexico . 5,723 parts In-Stock

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5,723

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Corphita

USA . 1,859 parts In-Stock

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1,859

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UHIMA Technologies

Türkiye . 800 parts In-Stock

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800

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Overview

Unleash the power of innovation with the LC898113 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The LC898113 falls under the category of Other Function uPs, uCs & Peripheral ICs, making it versatile for a wide range of applications. Experience the value and benefits this product brings, from its compact package body material to its maximum supply voltage of 3.6V. Trust in Onsemi to provide cutting-edge technology that propels your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and reliability, making the product suitable for various industrial applications.

Surface Mount: YES

Surface mount technology simplifies PCB assembly process and improves circuit reliability.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power supply options and compatibility with various voltage sources.

Package Shape: SQUARE

Square package shape provides efficient use of space on the PCB, allowing for compact designs.

No. of Terminals: 49

A higher number of terminals allow for more connectivity options and versatile circuit configurations.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Grid array package style with very thin profile and fine pitch improves thermal performance and signal integrity.

Minimum Supply Voltage: 2.7 V

Low minimum supply voltage allows for energy-efficient operation and extends battery life in portable devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures reliability in harsh environmental conditions.

Minimum Operating Temperature: -30 °C

Wide minimum operating temperature range enables operation in extreme cold environments without performance degradation.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enhances signal routing efficiency.

Maximum Seated Height: 0.8 mm

Low seated height allows for compact designs and contributes to overall system miniaturization.

Width: 4 mm

Compact width dimension facilitates space-saving integration in tight PCB layouts.

Length: 4 mm

Compact length dimension contributes to the overall small footprint of the product.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Inclusion of microprocessor circuit enhances processing capabilities and allows for advanced application functionalities.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for energy-efficient and reliable operation.

Terminal Form: BALL

Ball terminal form provides good contact reliability and facilitates easy assembly onto the PCB.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage ensures consistent performance and compatibility with standard power sources.

Terminal Pitch: 0.5 mm

Fine terminal pitch enables high-density packaging and allows for more terminals in a limited space, increasing connectivity options.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs LC898113 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

JESD-30 Code:

S-PBGA-B49

Length:

4 mm

No. of Terminals:

49

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

4 mm

Peripheral IC Type:

Trade Compliance

LC898113 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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