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LC898124EP1XC-MH

Onsemi

LC898124EP1XC-MH by Onsemi

LC898124EP1XC-MH by Onsemi is a MICROPROCESSOR CIRCUIT with 27 terminals in a GRID ARRAY package. It operates b/w -30 to 85 °C with supply voltage range of 2.6V to 3.3V, making it suitable for applications requiring high performance and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,438 parts In-Stock

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Vyrian

USA . 753 parts In-Stock

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SupplyDigital Components

Austria . 6,390 parts In-Stock

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Kulean Microsystems

USA . 4,697 parts In-Stock

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Problanco Electronics

Mexico . 3,301 parts In-Stock

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Corphita

USA . 1,320 parts In-Stock

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TANS Electronics

Latvia . 906 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 464 parts In-Stock

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Corohmni

South Africa . 286 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the LC898124EP1XC-MH by Onsemi. Crafted with precision and expertise, this microprocessor circuit offers unparalleled performance and reliability in a compact package. Ideal for a wide range of applications, from consumer electronics to industrial automation, this product guarantees seamless integration and superior functionality. Elevate your projects with the quality and innovation of Onsemi, and experience the value and benefits that this exceptional product brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the IC, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes the IC easier to install on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 3.3 V

The high maximum supply voltage allows for compatibility with a wide range of power sources, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the circuit board, optimizing the overall design.

No. of Terminals: 27

Having a higher number of terminals allows for more connectivity options and functionalities, making the IC suitable for complex electronic systems.

Technology: CMOS

The CMOS technology used in the IC ensures low power consumption and high noise immunity, making it energy-efficient and reliable for long-term operation.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs LC898124EP1XC-MH attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBGA-B27

JESD-609 Code:

e1

Length:

3.89 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

27

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.33 mm

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.6 V

Nominal Supply Voltage:

2.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.3 mm

Peripheral IC Type:

Trade Compliance

LC898124EP1XC-MH Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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