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LC898113RA-WH

Onsemi

LC898113RA-WH by Onsemi

LC898113RA-WH by Onsemi is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -30 to 85 °C with supply voltage range of 2.7V to 3.6V. This IC, in GRID ARRAY package style, is ideal for applications requiring high performance and compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,839 parts In-Stock

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1,839

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Digiode

USA . 1,034 parts In-Stock

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1,034

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 355 parts In-Stock

1+ parts

$21.944

100+ parts

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355

$21.944

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TANS Electronics

Latvia . 6,687 parts In-Stock

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6,687

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SupplyDigital Components

Austria . 5,854 parts In-Stock

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5,854

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Problanco Electronics

Mexico . 3,915 parts In-Stock

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3,915

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Kulean Microsystems

USA . 2,808 parts In-Stock

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2,808

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Corphita

USA . 1,250 parts In-Stock

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1,250

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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Overview

Experience superior performance and reliability with the LC898113RA-WH by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality in their products. This versatile microprocessor circuit is ideal for a wide range of applications, offering seamless integration and optimized functionality. Whether you're looking for a solution for consumer electronics or industrial equipment, this product delivers exceptional value and unmatched benefits. Trust Onsemi to provide you with the cutting-edge technology you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, suitable for a variety of applications.

Surface Mount: YES

Being surface mountable makes the product easier to integrate into circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for flexibility in power requirements, making the product versatile and compatible with different systems.

Package Shape: SQUARE

The square package shape is easy to handle and align during assembly, ensuring proper and efficient installation.

No. of Terminals: 49

The high number of terminals allows for a greater level of connectivity and functionality in the product, suitable for complex applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the product can withstand extended use in various environments without overheating.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows the product to function effectively even in cold conditions, making it reliable in different climates.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy soldering and connection to the circuit board, simplifying the assembly process.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Being a microprocessor circuit, the product offers advanced processing capabilities, suitable for sophisticated electronic applications.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high speed operation, making it energy-efficient and responsive.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage provides stable power delivery to the product, ensuring consistent performance and reliability.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high density mounting, enabling more components to be placed on a circuit board, increasing functionality in a compact space.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs LC898113RA-WH attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

Additional Features:

ALSO REQIRIES 1.8 V SUPPLY; SEATED HGT-NOM

JESD-30 Code:

S-PBGA-B49

Length:

4 mm

No. of Terminals:

49

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

4 mm

Peripheral IC Type:

Trade Compliance

LC898113RA-WH Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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