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LC89052TA-E

Onsemi

LC89052TA-E by Onsemi

LC89052TA-E by Onsemi is a 24-terminal IC with 3.3V power supply, suitable for consumer circuits. It features CMOS technology, operates b/w -30 to 70 °C, and has a small outline package style. Ideal for applications requiring a compact design and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 788 parts In-Stock

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Digiode

USA . 331 parts In-Stock

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Problanco Electronics

Mexico . 6,877 parts In-Stock

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SupplyDigital Components

Austria . 6,872 parts In-Stock

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Kulean Microsystems

USA . 3,616 parts In-Stock

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TANS Electronics

Latvia . 1,404 parts In-Stock

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Corphita

USA . 358 parts In-Stock

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UHIMA Technologies

Türkiye . 221 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Discover the cutting-edge LC89052TA-E by Onsemi, a top-tier manufacturer known for creating high-quality consumer ICs. This product is a game-changer in its category, offering unparalleled performance and reliability. From smart home devices to automotive applications, this versatile IC boasts a wide range of uses. Customers will benefit from its innovative technology, compact design, and excellent value. Upgrade your projects with the LC89052TA-E and experience the difference that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the IC, ensuring a longer lifespan.

Surface Mount: YES

Makes it easier to mount the IC onto a PCB, saving space and simplifying the manufacturing process.

Power Supplies (V): 3.3

Operates at a commonly used voltage, making it compatible with a wide range of systems.

Minimum Operating Temperature: -30 °C

Can operate in colder environments without issues, increasing the versatility of the product.

Technology: CMOS

Uses CMOS technology which is known for low power consumption and high noise immunity, improving efficiency.

Technical Specifications

Other Function Consumer ICs LC89052TA-E attributes and parameters. Explore more Other Function Consumer ICs devices from Onsemi

Specs

Additional Features:

ALSO REQUIRED SUPPLY2 3 TO 3.6 V

General IC Type:

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e6

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

4

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Consumer ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

LC89052TA-E General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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