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LC709301FRF-AUNH

Onsemi

LC709301FRF-AUNH by Onsemi

LC709301FRF-AUNH by Onsemi is a Power Management IC with 24 terminals in a square chip carrier package. Operating temperature range from -40 to 85 °C, suitable for industrial applications. Features include min supply voltage of 1.8V and max supply voltage of 5.5V, making it ideal for power supply management circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,241 parts In-Stock

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Digiode

USA . 1,336 parts In-Stock

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Ampacity Inc.

Singapore . 1,007 parts In-Stock

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$3.500

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$3.500

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AZTECH Wire

Italy . 694 parts In-Stock

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$16.250

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Component Stockers USA

USA . 548 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,119 parts In-Stock

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Kulean Microsystems

USA . 6,768 parts In-Stock

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TANS Electronics

Latvia . 5,643 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,964 parts In-Stock

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Problanco Electronics

Mexico . 1,831 parts In-Stock

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Corohmni

South Africa . 388 parts In-Stock

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Microchip USA

USA . 180 parts In-Stock

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UHIMA Technologies

Türkiye . 99 parts In-Stock

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Overview

Enhance your power management solutions with the LC709301FRF-AUNH by Onsemi. Designed with precision and quality in mind, this Power Management IC offers unparalleled performance and reliability. With its surface mount capability and compact square package shape, it is perfect for a wide range of industrial applications. Trust Onsemi's expertise in power supply management circuits to deliver optimal results for your projects. Experience the value and benefits of this advanced technology, ensuring efficiency and stability in your power management systems.

Feature Benefit Bullets

Surface Mount: YES

This allows for easy and efficient PCB assembly, saving time and cost during manufacturing.

Package Shape: SQUARE

Square packages are typically more space-efficient and provide better thermal performance compared to other shapes.

No. of Terminals: 24

Having a higher number of terminals allows for more functionality and connectivity options within the IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures reliability in both extreme cold and hot conditions.

Terminal Position: QUAD

Quad terminal position provides better stability and connectivity compared to other configurations.

Width (mm): 3.5 mm

Compact width allows for space-saving integration in tight PCB layouts.

Other IC type: POWER SUPPLY MANAGEMENT CIRCUIT

This IC is specifically designed for efficient power management, making it a reliable choice for power-sensitive applications.

Minimum Supply Voltage (Vsup): 1.8 V

Low minimum supply voltage allows for operation in systems with lower power supply capabilities.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature ranges ensure reliable operation in demanding industrial environments.

Terminal Form: NO LEAD

No-lead terminals offer better soldering reliability and thermal performance compared to traditional leaded packages.

Terminal Pitch: 0.5 mm

Fine terminal pitch provides high-density packaging and enables compact designs.

Maximum Supply Voltage (Vsup): 5.5 V

With a high maximum supply voltage, this IC can support a wide range of power supply inputs.

Technical Specifications

Power Management ICs LC709301FRF-AUNH attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-XQCC-N24

Length:

3.5 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.5 mm

Trade Compliance

LC709301FRF-AUNH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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