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LC709201F02-RD-H

Onsemi

LC709201F02-RD-H by Onsemi

LC709201F02-RD-H by Onsemi is a Power Management IC with 2.5/5V power supplies, -40 to 85 °C operating temp range, and 0.016mA max supply current. It is used in industrial applications for power supply support circuits due to its CMOS technology and quad terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,498 parts In-Stock

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Digiode

USA . 726 parts In-Stock

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Problanco Electronics

Mexico . 7,018 parts In-Stock

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TANS Electronics

Latvia . 3,401 parts In-Stock

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SupplyDigital Components

Austria . 1,693 parts In-Stock

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Corphita

USA . 656 parts In-Stock

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Kulean Microsystems

USA . 468 parts In-Stock

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Enhance the performance of your power management systems with the LC709201F02-RD-H from Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for various applications in the Power Management ICs category. This chip carrier package boasts a wide temperature range and low supply voltage, making it ideal for industrial use. Upgrade your power supply support circuits with this innovative technology that offers maximum efficiency and durability. Experience the value and benefits of Onsemi's LC709201F02-RD-H for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy installation on printed circuit boards, saving time and effort during assembly.

Power Supplies (V): 2.5/5

Supports multiple power supply voltages, offering flexibility and compatibility with various system requirements.

No. of Terminals: 16

Having 16 terminals allows for versatile connectivity options, accommodating different types of connections for power management.

Package Style (Meter): CHIP CARRIER

The chip carrier package style is compact and space-efficient, making it suitable for smaller electronic devices where space is limited.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in extremely cold environments, making it suitable for a wide range of applications.

Terminal Position: QUAD

The quad terminal position allows for secure and stable connections, preventing the risk of disconnection or short circuits.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, contributing to improved energy efficiency and longer battery life.

Technical Specifications

Power Management ICs LC709201F02-RD-H attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

Length:

2.6 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.10SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2.5/5

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.016 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

2.6 mm

Trade Compliance

LC709201F02-RD-H Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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