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LC709202FRD-01-VH

Onsemi

LC709202FRD-01-VH by Onsemi

LC709202FRD-01-VH by Onsemi is a Power Management IC with 2.5/4.5V power supplies, 16 terminals, and 0.026mA max supply current. It is used in industrial applications, operates b/w -40 to 85 °C, and features CMOS technology in a square chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,089 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 6,854 parts In-Stock

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Kulean Microsystems

USA . 3,026 parts In-Stock

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TANS Electronics

Latvia . 1,507 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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Problanco Electronics

Mexico . 364 parts In-Stock

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Corohmni

South Africa . 204 parts In-Stock

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Corphita

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Overview

Enhance your power management solutions with the LC709202FRD-01-VH by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge Power Management ICs that cater to a wide range of applications. This chip carrier package is perfect for industrial-grade temperature environments, offering a supply current of 0.026 mA and a terminal pitch of 0.5 mm. Upgrade your power management systems today with the LC709202FRD-01-VH and experience unparalleled performance and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and reliability for the package, ensuring the IC can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Package Shape: SQUARE

Square package shape provides a compact design, saving space on the PCB and allowing for efficient layout of components.

Power Supplies (V): 2.5/4.5

Supports multiple power supply voltages, offering flexibility in system design and compatibility with a variety of applications.

No. of Terminals: 16

16 terminals provide ample connectivity options, allowing for versatile connections with other components in the system.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures stable performance even in demanding industrial environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C enables the IC to function reliably in cold conditions without any issues.

Terminal Position: QUAD

Quad terminal positions offer increased connectivity options and make it easier to interface with other components on the PCB.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the IC can operate effectively in harsh industrial environments, making it suitable for rugged applications.

Maximum Supply Current (Isup): 0.026 mA

Low maximum supply current of 0.026 mA helps minimize power consumption and ensures efficient energy usage.

Technology: CMOS

CMOS technology offers high efficiency and low power consumption, making the IC ideal for power management applications.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and eliminates lead-related hazards, ensuring compliance with safety standards.

Terminal Pitch: 0.5 mm

Small terminal pitch of 0.5 mm allows for dense packing of components on the PCB, enabling compact and space-efficient designs.

Technical Specifications

Power Management ICs LC709202FRD-01-VH attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.10SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2.5/4.5

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.026 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Trade Compliance

LC709202FRD-01-VH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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