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LC709202FRD-02-SH

Onsemi

LC709202FRD-02-SH by Onsemi

LC709202FRD-02-SH by Onsemi is a Power Management IC with 2.5/4.5V power supplies, 16 terminals, and 0.026mA max supply current. It is used in industrial applications due to its -40 to 85 °C operating temperature range and CMOS technology for efficient power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,937 parts In-Stock

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Vyrian

USA . 721 parts In-Stock

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SupplyDigital Components

Austria . 8,133 parts In-Stock

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Kulean Microsystems

USA . 6,353 parts In-Stock

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Problanco Electronics

Mexico . 5,182 parts In-Stock

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Corphita

USA . 1,095 parts In-Stock

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Corohmni

South Africa . 242 parts In-Stock

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UHIMA Technologies

Türkiye . 87 parts In-Stock

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TANS Electronics

Latvia . 24 parts In-Stock

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Overview

Unlock the power of efficient energy management with the LC709202FRD-02-SH by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Management ICs. Ideal for a wide range of applications, this IC offers unparalleled value and benefits to customers looking to optimize their power supplies. Say goodbye to inefficiency and hello to seamless performance with the LC709202FRD-02-SH.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and lightweight design for easy handling and installation.

Surface Mount: YES

The surface mount feature allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the circuit board, enabling compact and neat designs.

Power Supplies (V): 2.5/4.5

Support for multiple power supply voltages (2.5V and 4.5V) provides versatility for different applications and requirements.

No. of Terminals: 16

Having 16 terminals allows for a wide range of connectivity options, enabling compatibility with various devices and systems.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers high reliability and heat dissipation capabilities for optimal performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this power management IC can withstand high temperature environments, ensuring reliable operation.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this product suitable for use in a wide range of environmental conditions.

Terminal Position: QUAD

The quad terminal position allows for easy connectivity and soldering onto the circuit board, simplifying installation and maintenance.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this power management IC is built to withstand demanding conditions and ensure long-term performance.

Maximum Supply Current (Isup): 0.026 mA

The low maximum supply current of 0.026 mA helps to minimize power consumption, making this product energy-efficient and cost-effective.

Technology: CMOS

The use of CMOS technology ensures low power consumption, high speed operation, and compatibility with a wide range of devices and systems.

Terminal Form: NO LEAD

The no lead terminal form simplifies the manufacturing process and enhances reliability by eliminating solder joints that can be prone to failure.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch allows for precise and compact placement of terminals on the circuit board, enabling high-density designs and efficient use of space.

Technical Specifications

Power Management ICs LC709202FRD-02-SH attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.10SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2.5/4.5

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.026 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Trade Compliance

LC709202FRD-02-SH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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