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KSB744A-Y

Onsemi

KSB744A-Y by Onsemi

KSB744A-Y by Onsemi is a PNP BJT transistor with max VCEsat of 2V, hFE of 160, and IC of 3A. Ideal for amplifier applications, it has a max power dissipation of 10W and operates up to 150 °C. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,966 parts In-Stock

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Digiode

USA . 1,239 parts In-Stock

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SupplyDigital Components

Austria . 3,858 parts In-Stock

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Problanco Electronics

Mexico . 2,657 parts In-Stock

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Kulean Microsystems

USA . 2,108 parts In-Stock

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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Supply Digital

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Corphita

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Corohmni

South Africa . 455 parts In-Stock

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TANS Electronics

Latvia . 210 parts In-Stock

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Overview

Discover the power of the KSB744A-Y by Onsemi – a top-quality Small Signal Bipolar Junction Transistor designed for amplification applications. With Onsemi's reputation for superior manufacturing standards, this PNP transistor offers reliability and performance like no other. Whether you're looking to enhance audio systems or improve signal processing, this transistor delivers exceptional value and efficiency. Trust Onsemi to provide innovative solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for easy implementation in circuit design, especially for applications that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit designs and makes it easy to integrate this transistor into a variety of amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized to provide efficient amplification of signals.

Maximum VCEsat: 2 V

With a low maximum VCEsat of 2V, this transistor offers efficient performance with minimal voltage drop, resulting in lower power dissipation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in circuits, making it convenient for circuit board layouts and assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process and provides a secure connection, ensuring reliable performance in various applications.

No. of Terminals: 3

The 3 terminals provide the necessary connections for the transistor to function in a circuit, allowing for flexibility in circuit design and application.

Maximum Power Dissipation (Abs): 10 W

With a high maximum power dissipation of 10W, this transistor can handle high power levels without overheating, ensuring reliable operation in demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure mounting mechanism, ensuring stability and durability in applications where vibrations or mechanical stress may be present.

Maximum Power Dissipation Ambient: 1 W

The low maximum power dissipation in ambient conditions of 1W ensures that the transistor operates efficiently and reliably even in high temperature environments.

Minimum DC Current Gain (hFE): 160

With a minimum DC current gain of 160, this transistor offers high amplification capabilities, making it ideal for applications where signal amplification is crucial.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures without degradation, ensuring long-term reliability in harsh environments.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage of 60V, this transistor can handle high voltage applications, providing versatility for various circuit designs.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures reliable performance and stability, making this transistor a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle moderate to high current levels, making it suitable for a wide range of amplifier applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and allows for easy integration into circuit designs, enhancing the overall usability of this transistor.

Nominal Transition Frequency (fT): 45 MHz

The high nominal transition frequency of 45MHz indicates the speed at which this transistor can switch signals, making it suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744A-Y attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744A-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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