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KSB772G

Onsemi

KSB772G by Onsemi

KSB772G by Onsemi is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 200, and IC of 3A. Ideal for amplifier applications due to its high transition frequency of 80MHz and low collector-emitter voltage of 30V. Package style is flange mount with through-hole terminals.

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Digiode

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Kulean Microsystems

USA . 8,020 parts In-Stock

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TANS Electronics

Latvia . 1,520 parts In-Stock

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Supply Digital

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Corphita

USA . 1,067 parts In-Stock

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Problanco Electronics

Mexico . 813 parts In-Stock

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UHIMA Technologies

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SupplyDigital Components

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Corohmni

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Overview

Unleash the power of the KSB772G by Onsemi, a top-of-the-line small signal bipolar junction transistor that guarantees high performance and reliability. Manufactured by Onsemi, a renowned industry leader, this PNP transistor is ideal for amplifier applications. With a maximum VCEsat of 0.5V and a minimum DC current gain of 200, this transistor offers exceptional value and efficiency. Whether you're looking to amplify signals or enhance your electronic projects, the KSB772G is the perfect choice for all your needs. Elevate your designs with this premium quality transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

This specific polarity type is suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified design with a single transistor makes it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal saturation voltage, leading to improved efficiency in the transistor.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement and mounting in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust connections and make it easy for manual soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor can easily connect to external components in a circuit.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability allows the transistor to handle increased power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy mounting options in various electronic setups.

Maximum Power Dissipation Ambient: 1 W

With a low ambient power dissipation rating, this transistor can operate efficiently in different environmental conditions.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the transistor to function reliably in varying temperature conditions.

Maximum Collector-Base Capacitance: 55 pF

Low capacitance value minimizes signal distortion and interference in the transistor's operation.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating provides a wide safety margin for the transistor in different applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, ensuring reliable operation of the transistor.

Maximum Collector Current (IC): 3 A

High collector current rating allows the transistor to handle larger currents without the risk of damage.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures correct alignment during installation.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows the transistor to operate effectively in high-frequency signal applications such as amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB772G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

55 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSB772G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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