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KSB744A

Onsemi

KSB744A by Onsemi

The Onsemi KSB744A is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max VCEsat of 2V and can handle a collector current of up to 3A. With a transition frequency of 45MHz and max power dissipation of 10W, it operates at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 923 parts In-Stock

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Vyrian

USA . 299 parts In-Stock

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TANS Electronics

Latvia . 8,384 parts In-Stock

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Problanco Electronics

Mexico . 7,561 parts In-Stock

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Kulean Microsystems

USA . 2,909 parts In-Stock

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SupplyDigital Components

Austria . 2,541 parts In-Stock

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Corphita

USA . 2,451 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 212 parts In-Stock

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Corohmni

South Africa . 58 parts In-Stock

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Overview

Discover the power of the KSB744A by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for amplification applications. With a maximum VCEsat of just 2V and a minimum DC current gain of 60, this PNP transistor offers unmatched performance and efficiency. Its robust construction and superior design make it a reliable choice for electronics projects. Whether you're a DIY enthusiast or a professional engineer, the KSB744A is sure to meet your needs with its 10W maximum power dissipation and high collector current capacity of 3A. Upgrade your circuits today with the KSB744A and experience the difference that Onsemi's cutting-edge technology can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various electronic projects.

Maximum VCEsat: 2 V

Low VCEsat helps minimize power loss and improves efficiency in amplifier circuits.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and connection to circuit boards, making installation convenient.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability allows the transistor to handle higher power applications without overheating.

Maximum Collector-Emitter Voltage: 60 V

Provides a wide voltage handling capability, making it suitable for a range of circuits and applications.

Nominal Transition Frequency (fT): 45 MHz

High transition frequency allows for high-speed operation in amplifier circuits, ensuring reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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