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KSB744O

Onsemi

KSB744O by Onsemi

KSB744O by Onsemi is a PNP BJT transistor with max VCEsat of 2V, hFE of 100, and IC of 3A. Ideal for amplifier applications, it has a max power dissipation of 10W and operates up to 150 °C. With a package style of flange mount, it offers high performance in a compact design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,706 parts In-Stock

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Vyrian

USA . 597 parts In-Stock

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TANS Electronics

Latvia . 5,138 parts In-Stock

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Kulean Microsystems

USA . 4,454 parts In-Stock

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Problanco Electronics

Mexico . 3,069 parts In-Stock

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SupplyDigital Components

Austria . 2,064 parts In-Stock

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Corphita

USA . 1,653 parts In-Stock

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Supply Digital

USA . 901 parts In-Stock

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UHIMA Technologies

Türkiye . 593 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Upgrade your electronic projects with the KSB744O by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their reliable and innovative components, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 10W and a minimum DC current gain of 100, this transistor offers exceptional performance and efficiency. Whether you're a DIY enthusiast or a professional electronics engineer, the KSB744O provides value, reliability, and precision for all your projects. Experience the difference with Onsemi's superior technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for internal components, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Ideal for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and troubleshooting with a single transistor setup.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 2 V

Low saturation voltage helps in minimizing power loss and improving efficiency in amplifier applications.

Package Shape: RECTANGULAR

Easy to mount and integrate into circuit boards with a rectangular package shape.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connections on circuit boards.

No. of Terminals: 3

Provides necessary connections for proper functioning of the transistor in circuit applications.

Maximum Power Dissipation (Abs): 10 W

Allows for high power dissipation, making the transistor suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and heat dissipation in the flange mount style package.

Maximum Power Dissipation Ambient: 1 W

Indicates the power dissipation capability in ambient conditions for safe operation.

Minimum DC Current Gain (hFE): 100

Provides high current gain for efficient amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, suitable for applications requiring extended temperature range.

Maximum Collector-Emitter Voltage: 45 V

Withstands high voltage levels preventing damage in voltage-sensitive applications.

Transistor Element Material: SILICON

Utilizes silicon as the element material for reliable and stable performance in various applications.

Maximum Collector Current (IC): 3 A

Handles high collector current levels, making it suitable for applications requiring high current capability.

Terminal Position: SINGLE

Simplifies circuit design with single terminal position for connection.

Nominal Transition Frequency (fT): 45 MHz

Indicates the frequency response capability of the transistor, suitable for applications requiring high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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