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KSB744A-R

Onsemi

KSB744A-R by Onsemi

KSB744A-R by Onsemi is a PNP BJT transistor with 3 terminals and max VCEsat of 2V. Ideal for amplifier applications, it has a max power dissipation of 10W and operates at up to 150 °C. With a fT of 45MHz, it offers high DC current gain (hFE) of 60 for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,333 parts In-Stock

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Vyrian

USA . 2,324 parts In-Stock

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Problanco Electronics

Mexico . 4,314 parts In-Stock

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TANS Electronics

Latvia . 3,882 parts In-Stock

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Kulean Microsystems

USA . 3,712 parts In-Stock

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SupplyDigital Components

Austria . 3,618 parts In-Stock

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Supply Digital

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Corphita

USA . 847 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Enhance your electronic projects with the KSB744A-R by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 45MHz, this transistor ensures efficient operation and superior functionality. Upgrade your designs with the KSB744A-R and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and insulation, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP type transistor allows for high efficiency in certain circuit designs, making it a good choice for specific amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to work with in amplifier applications.

Maximum VCEsat: 2 V

The low VCEsat value indicates minimal saturation voltage, leading to high efficiency and reduced power loss in amplifier circuits.

Maximum Power Dissipation (Abs): 10 W

The high power dissipation capacity allows the transistor to handle significant power levels, making it suitable for various amplifier applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating ensures that the transistor can withstand higher voltage levels in amplifier circuits.

Nominal Transition Frequency (fT): 45 MHz

The high transition frequency indicates the speed at which the transistor can operate, making it suitable for high-frequency amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744A-R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744A-R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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