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KSB772O

Onsemi

KSB772O by Onsemi

KSB772O by Onsemi is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 100, and IC of 3A. Ideal for amplifier applications due to its high transition frequency of 80MHz and low collector-emitter voltage of 30V. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,623 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 6,550 parts In-Stock

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Kulean Microsystems

USA . 6,344 parts In-Stock

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TANS Electronics

Latvia . 3,676 parts In-Stock

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Corphita

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Corohmni

South Africa . 466 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Problanco Electronics

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor for your amplifier projects? Look no further than the KSB772O by Onsemi. Known for their high-quality components, Onsemi delivers top-notch products that guarantee performance and durability. The KSB772O offers a maximum VCEsat of 0.5V, ensuring efficient power usage while providing a maximum collector current of 3A for optimal amplification. With a minimum DC current gain of 100, this PNP transistor is perfect for various amplifier applications. Trust Onsemi's reputation for excellence and choose the KSB772O for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside the transistor.

Polarity or Channel Type: PNP

Suitable for various amplifier applications.

Configuration: SINGLE

Simplified circuit design and easier to work with.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in minimizing power loss and improving efficiency.

Package Shape: RECTANGULAR

Easy to handle and mount in electronic circuits.

Terminal Form: THROUGH-HOLE

Provides secure connections on PCBs and easy manual soldering.

Maximum Power Dissipation (Abs): 10 W

Capable of handling high power levels without damage.

Maximum Power Dissipation Ambient: 1 W

Operates efficiently within specified ambient temperature limits.

Minimum DC Current Gain (hFE): 100

Ensures stable and predictable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures in various applications.

Maximum Collector-Base Capacitance: 55 pF

Helps in minimizing signal loss and distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage rating for many common electronic circuits.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability.

Maximum Collector Current (IC): 3 A

Capable of handling moderate current levels in various applications.

Terminal Position: SINGLE

Simplified pin configuration for easy integration in circuit designs.

Nominal Transition Frequency (fT): 80 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB772O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

55 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSB772O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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