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KSB772YS

Onsemi

KSB772YS by Onsemi

KSB772YS by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 10W, hFE of 160, and fT of 80MHz. With a max collector-emitter voltage of 30V and operating temp up to 150°C, it's suitable for various electronic circuits.

Median Price

$0.229

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,058 parts In-Stock

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$0.169

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$0.169

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Mouser Electronics

USA . 9,252 parts In-Stock

1+ parts

$0.640

100+ parts

$0.284

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$0.224

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$0.191

9,252

$0.640

$0.284

$0.224

$0.191

Rochester

USA . 217,342 parts In-Stock

1+ parts

-

100+ parts

$0.248

1k+ parts

$0.205

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$0.183

217,342

-

$0.248

$0.205

$0.183

DigiKey

USA . 42,539 parts In-Stock

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$0.310

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42,539

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$0.310

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Verical

USA . 2,647 parts In-Stock

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$0.229

2,647

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Flip Electronics (Authorized)

USA . 1,781 parts In-Stock

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1,781

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Master Electronics

USA . 590 parts In-Stock

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$0.218

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$0.184

590

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$0.218

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$0.184

Chip1Stop

Japan . 210 parts In-Stock

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$0.168

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$0.136

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210

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$0.168

$0.136

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Distributors (In-Stock)

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Digiode

USA . 2,245 parts In-Stock

1+ parts

$0.193

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$0.193

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Nova Conductors

Japan . 100 parts In-Stock

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$0.239

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100

$0.239

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TME

Poland . 1,394 parts In-Stock

1+ parts

$0.730

100+ parts

$0.388

1k+ parts

$0.273

10k+ parts

$0.260

1,394

$0.730

$0.388

$0.273

$0.260

DigiKey Marketplace

USA . 45,874 parts In-Stock

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Chip Stock

USA . 43,000 parts In-Stock

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Vyrian

USA . 34,755 parts In-Stock

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34,755

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Flip Electronics

USA . 29,781 parts In-Stock

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29,781

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IBS Electronics

USA . 590 parts In-Stock

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$0.305

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$0.258

590

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$0.305

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$0.258

Prism Electronics

USA . 7 parts In-Stock

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Ampacity Inc.

Singapore . 34,882 parts In-Stock

1+ parts

$0.143

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34,882

$0.143

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Corohmni

South Africa . 321 parts In-Stock

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$0.161

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321

$0.161

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Corphita

USA . 1,259 parts In-Stock

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$0.183

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1,259

$0.183

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Andel Nordic

Denmark . 3,475 parts In-Stock

1+ parts

$8.916

100+ parts

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$8.559

10k+ parts

$8.559

3,475

$8.916

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$8.559

$8.559

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 43,902 parts In-Stock

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$0.250

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43,902

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

USA . 24,011 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,705 parts In-Stock

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Lixinc

USA . 9,520 parts In-Stock

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Problanco Electronics

Mexico . 8,296 parts In-Stock

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SupplyDigital Components

Austria . 7,231 parts In-Stock

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TANS Electronics

Latvia . 6,448 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,827 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,292 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,218 parts In-Stock

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Supply Digital

USA . 1,755 parts In-Stock

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1,755

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.235

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$0.227

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$0.223

50

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$0.235

$0.227

$0.223

Overview

Enhance your electronic projects with the KSB772YS by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor offers exceptional performance in amplifier applications, boasting a maximum power dissipation of 10W and a maximum collector current of 3A. With a minimum DC current gain of 160 and a nominal transition frequency of 80MHz, this transistor provides reliability and efficiency. Upgrade your designs with the KSB772YS and experience the value and benefits that Onsemi products bring to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, expanding compatibility with existing components.

Configuration: SINGLE

Simplified circuit design and ease of use, ideal for straightforward amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio or signal processing.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards, offering a secure and reliable connection.

Maximum Power Dissipation (Abs): 10 W

High power handling capability allows for efficient amplification without the risk of overheating.

Package Style (Meter): FLANGE MOUNT

Enables convenient mounting onto surfaces, enhancing flexibility in installation options.

Minimum DC Current Gain (hFE): 160

Assures consistent and reliable amplification performance with a high gain factor.

Maximum Operating Temperature: 150 °C

Can operate in elevated temperatures without sacrificing performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 30 V

Can handle higher voltage levels, ensuring stability and reliability in the circuit.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials, making it a preferred choice for transistors.

Maximum Collector Current (IC): 3 A

Capable of handling high currents, suitable for demanding applications that require increased power output.

Terminal Finish: MATTE TIN

Provides a stable and low-resistance connection, ensuring optimal signal transmission and reliability.

Terminal Position: SINGLE

Simplified pin configuration for easy integration into circuit boards, reducing complexity in design.

Nominal Transition Frequency (fT): 80 MHz

Enables high-speed signal processing and amplification, suitable for applications requiring rapid response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB772YS attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSB772YS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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