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KSB744Y

Onsemi

KSB744Y by Onsemi

KSB744Y by Onsemi is a PNP BJT transistor with 3 terminals and a max VCEsat of 2V. With a min hFE of 160, it's ideal for amplifier applications. This rectangular package has a flange mount style and can handle up to 10W power dissipation.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 3,260 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 8,176 parts In-Stock

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Kulean Microsystems

USA . 4,662 parts In-Stock

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SupplyDigital Components

Austria . 3,975 parts In-Stock

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Problanco Electronics

Mexico . 3,426 parts In-Stock

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Supply Digital

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Corphita

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UHIMA Technologies

Türkiye . 653 parts In-Stock

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Corohmni

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Overview

Boost your electronic projects with the KSB744Y Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with top-notch quality, this PNP transistor offers high performance for amplifier applications. Its maximum VCEsat of 2V ensures efficient power usage, while its 10W maximum power dissipation guarantees reliability. With a minimum DC current gain of 160 and a nominal transition frequency of 45MHz, the KSB744Y is the perfect choice for your next project. Trust Onsemi's expertise and invest in the KSB744Y for exceptional value and unmatched benefits in your electronics ventures.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides good protection for the transistor.

Polarity or Channel Type: PNP

Suitable for circuits requiring PNP transistors.

Configuration: SINGLE

Simplified design for easy integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance.

Maximum VCEsat: 2 V

Low voltage drop across the collector-emitter junction, reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Compact shape for space-efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards for secure connections.

No. of Terminals: 3

Simple design with fewer terminals for easy connection.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability, suitable for applications requiring high output power.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and heat dissipation in various applications.

Maximum Power Dissipation Ambient: 1 W

Efficient heat dissipation in ambient conditions, ensuring proper functionality.

Minimum DC Current Gain (hFE): 160

High DC current gain for improved amplification performance.

Maximum Operating Temperature: 150 °C

Suitable for operation in high temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Can withstand higher voltages, making it suitable for a variety of circuits.

Transistor Element Material: SILICON

Reliable and widely used semiconductor material for transistors.

Maximum Collector Current (IC): 3 A

High collector current rating for handling larger currents.

Terminal Position: SINGLE

Simplified terminal layout for easy circuit integration.

Nominal Transition Frequency (fT): 45 MHz

High frequency response for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744Y attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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