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KSB744R

Onsemi

KSB744R by Onsemi

The Onsemi KSB744R is a PNP BJT transistor with 45V VCE, 3A IC, and 2V VCEsat. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 60. With a max operating temp of 150 °C, this transistor in PLASTIC/EPOXY package suits various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,513 parts In-Stock

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Digiode

USA . 2,228 parts In-Stock

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Kulean Microsystems

USA . 4,469 parts In-Stock

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SupplyDigital Components

Austria . 4,390 parts In-Stock

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TANS Electronics

Latvia . 2,771 parts In-Stock

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Corphita

USA . 2,353 parts In-Stock

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Problanco Electronics

Mexico . 1,921 parts In-Stock

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Supply Digital

USA . 933 parts In-Stock

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UHIMA Technologies

Türkiye . 682 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Unleash the power of innovation with the KSB744R by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this PNP transistor is perfect for amplifier applications. With a maximum VCEsat of 2V and a minimum DC current gain of 60, this transistor delivers exceptional power dissipation and temperature resistance. Whether you're a DIY enthusiast or a professional engineer, the KSB744R provides unmatched value, benefits, and advantages that will take your projects to the next level. Elevate your designs with the KSB744R and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product suitable for various applications.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and flexibility.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, reducing complexity and potential points of failure.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring high performance and reliability in amplification tasks.

Maximum VCEsat: 2 V

Low VCEsat minimizes power dissipation and improves efficiency in operation, leading to energy savings and reduced heat generation.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and placement within circuits or on PCBs, optimizing space utilization and assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for secure and reliable soldering connections, ensuring stable electrical connections and longevity.

Maximum Power Dissipation (Abs): 10 W

High maximum power dissipation capability enables the transistor to handle demanding applications without risk of overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting options in various industrial and electronic equipment.

Maximum Power Dissipation Ambient: 1 W

Low power dissipation in ambient conditions indicates efficient energy conversion and minimal heat output during normal operation.

Minimum DC Current Gain (hFE): 60

High minimum DC current gain ensures stable and consistent amplification performance, particularly in low-current applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in elevated temperature environments, expanding potential usage scenarios.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides robustness and ensures safe operation within specified voltage limits, enhancing device reliability.

Transistor Element Material: SILICON

Silicon transistor element material offers excellent electrical properties and reliability, making the product suitable for a wide range of applications.

Maximum Collector Current (IC): 3 A

High maximum collector current rating allows for handling of substantial current loads, making the transistor ideal for power applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the risk of errors and ensuring consistent performance.

Nominal Transition Frequency (fT): 45 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, enhancing performance in signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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