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KSB744A-O

Onsemi

KSB744A-O by Onsemi

KSB744A-O by Onsemi is a PNP BJT transistor with max VCEsat of 2V, hFE of 100, and IC of 3A. Ideal for amplifier applications, it has a max power dissipation of 10W and operates up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

USA . 598 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 8,371 parts In-Stock

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SupplyDigital Components

Austria . 7,949 parts In-Stock

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Problanco Electronics

Mexico . 4,510 parts In-Stock

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Supply Digital

USA . 2,284 parts In-Stock

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TANS Electronics

Latvia . 1,940 parts In-Stock

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Corphita

USA . 1,207 parts In-Stock

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Corohmni

South Africa . 197 parts In-Stock

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UHIMA Technologies

Türkiye . 29 parts In-Stock

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Overview

Unlock the power of high-quality amplification with the KSB744A-O from Onsemi. Designed for superior performance, this Small Signal Bipolar Junction Transistor is a game-changer in the world of electronics. Perfect for various applications, this PNP transistor offers customers unmatched value and benefits. With its impressive specifications and reliable manufacturer, Onsemi, the KSB744A-O is the ultimate choice for amplification needs. Experience top-notch quality and efficiency with this product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration as only one transistor is needed.

Transistor Application: AMPLIFIER

Designed specifically for use in amplification circuits, providing reliable performance for audio and signal amplification.

Maximum VCEsat: 2 V

Low VCEsat minimizes power loss and improves efficiency in amplifier applications.

Package Shape: RECTANGULAR

Allows for easy placement and mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connections to PCBs for convenient assembly.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in PCB layout.

Maximum Power Dissipation (Abs): 10 W

Can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting of the transistor in electronic systems.

Maximum Power Dissipation Ambient: 1 W

Suitable for low-power applications, ensuring efficient performance and reliability.

Minimum DC Current Gain (hFE): 100

Offers consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 60 V

Allows for operation at higher voltages, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 3 A

Capable of handling moderate to high current levels in various applications.

Terminal Position: SINGLE

Simplifies circuit connections and reduces the chances of wiring errors.

Nominal Transition Frequency (fT): 45 MHz

Suitable for high-frequency applications, providing fast response and signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSB744A-O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

KSB744A-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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