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FGY160T65SPD-F085

Onsemi

FGY160T65SPD-F085 by Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 882 W; Maximum Collector Current (IC): 240 A; No. of Elements: 1;

Median Price

$15.890

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 226 parts In-Stock

1+ parts

$9.810

100+ parts

$9.220

1k+ parts

$8.340

10k+ parts

-

226

$9.810

$9.220

$8.340

-

Farnell

UK . 685 parts In-Stock

1+ parts

$13.990

100+ parts

$9.180

1k+ parts

$8.720

10k+ parts

-

685

$13.990

$9.180

$8.720

-

Mouser Electronics

USA . 364 parts In-Stock

1+ parts

$15.890

100+ parts

-

1k+ parts

$9.750

10k+ parts

-

364

$15.890

-

$9.750

-

DigiKey

USA . 268 parts In-Stock

1+ parts

$15.890

100+ parts

$9.786

1k+ parts

$8.411

10k+ parts

-

268

$15.890

$9.786

$8.411

-

Newark

USA . 679 parts In-Stock

1+ parts

$19.730

100+ parts

$12.960

1k+ parts

$12.290

10k+ parts

-

679

$19.730

$12.960

$12.290

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Element14

Singapore . 685 parts In-Stock

1+ parts

$23.500

100+ parts

$14.660

1k+ parts

$14.370

10k+ parts

-

685

$23.500

$14.660

$14.370

-

Chip1Stop

Japan . 698 parts In-Stock

1+ parts

$44.900

100+ parts

$21.300

1k+ parts

$16.200

10k+ parts

-

698

$44.900

$21.300

$16.200

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Flip Electronics (Authorized)

USA . 25,787 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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25,787

-

-

-

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Verical

USA . 24,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$8.463

10k+ parts

-

24,750

-

-

$8.463

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,129 parts In-Stock

1+ parts

$6.700

100+ parts

-

1k+ parts

-

10k+ parts

-

2,129

$6.700

-

-

-

Digiode

USA . 2,305 parts In-Stock

1+ parts

$9.320

100+ parts

-

1k+ parts

-

10k+ parts

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2,305

$9.320

-

-

-

TME

Poland . 5 parts In-Stock

1+ parts

$14.950

100+ parts

-

1k+ parts

-

10k+ parts

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5

$14.950

-

-

-

Flip Electronics

USA . 24,887 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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24,887

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-

-

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NAC Semi

USA . 330 parts In-Stock

1+ parts

-

100+ parts

$42.200

1k+ parts

$38.950

10k+ parts

-

330

-

$42.200

$38.950

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 15 parts In-Stock

1+ parts

$1.383

100+ parts

-

1k+ parts

-

10k+ parts

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15

$1.383

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.440

100+ parts

$1.310

1k+ parts

$1.181

10k+ parts

-

50

$1.440

$1.310

$1.181

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Corphita

USA . 1,051 parts In-Stock

1+ parts

$8.829

100+ parts

-

1k+ parts

-

10k+ parts

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1,051

$8.829

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-

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Native Components

USA . 269 parts In-Stock

1+ parts

$60.999

100+ parts

-

1k+ parts

-

10k+ parts

$58.559

269

$60.999

-

-

$58.559

Northwest PG Solutions

USA . 1,243 parts In-Stock

1+ parts

$67.099

100+ parts

-

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-

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1,243

$67.099

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Perfect Parts

USA . 617,891 parts In-Stock

1+ parts

-

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617,891

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-

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GreenTree Electronics

Israel . 522,450 parts In-Stock

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-

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522,450

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QUARKTWIN TECHNOLOGY LTD

USA . 9,686 parts In-Stock

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-

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9,686

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-

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SupplyDigital Components

Austria . 8,355 parts In-Stock

1+ parts

-

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8,355

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-

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TANS Electronics

Latvia . 8,246 parts In-Stock

1+ parts

-

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8,246

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-

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Microchip USA

USA . 6,993 parts In-Stock

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6,993

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Kulean Microsystems

USA . 6,815 parts In-Stock

1+ parts

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6,815

-

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Problanco Electronics

Mexico . 1,066 parts In-Stock

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1,066

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

-

-

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UHIMA Technologies

Türkiye . 531 parts In-Stock

1+ parts

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531

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-

-

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Supply Digital

USA . 444 parts In-Stock

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444

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGY160T65SPD-F085 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.3 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

308 ns

Nominal Turn On Time (ton):

288 ns

Maximum VCEsat:

2.05 V

Trade Compliance

FGY160T65SPD-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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