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D45VH10BG

Onsemi

D45VH10BG by Onsemi

D45VH10BG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a nominal transition frequency of 50MHz in a rectangular package style suitable for flange mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,257 parts In-Stock

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Vyrian

USA . 1,800 parts In-Stock

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1,800

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Distributors (Availability)

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Native Components

USA . 502 parts In-Stock

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$0.058

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$0.056

502

$0.058

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$0.056

Problanco Electronics

Mexico . 7,974 parts In-Stock

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7,974

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Kulean Microsystems

USA . 7,538 parts In-Stock

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7,538

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SupplyDigital Components

Austria . 5,270 parts In-Stock

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5,270

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Corphita

USA . 2,235 parts In-Stock

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TANS Electronics

Latvia . 1,061 parts In-Stock

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1,061

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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778

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Northwest PG Solutions

USA . 371 parts In-Stock

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Corohmni

South Africa . 350 parts In-Stock

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Overview

Discover the power and reliability of the D45VH10BG Power BJT by Onsemi. With a reputation for superior quality and performance, Onsemi has created a product that is perfect for a wide range of applications, from switching to amplification. This PNP transistor offers customers exceptional value with its high DC current gain, low collector-emitter voltage, and impressive collector current capacity. Trust in Onsemi to provide you with the tools you need to succeed in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan in various applications.

Polarity or Channel Type: PNP

Suitable for circuits requiring PNP transistors, offering versatility for different design requirements.

Configuration: SINGLE

Simplified design and ease of use, ideal for applications where a single transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Easy to mount and integrate into circuits, saving space and simplifying assembly.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and provides mechanical stability, making it suitable for through-hole PCB mounting.

No. of Terminals: 3

Straightforward interface with other components, reducing complexity in circuit connections.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, enhancing reliability and performance.

Minimum DC Current Gain (hFE): 20

Provides amplification of current signal, ensuring proper functionality in various circuit applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling high voltage levels, ensuring safe and reliable operation in diverse circuit designs.

Transistor Element Material: SILICON

Offers high performance and reliability, making it a popular choice for semiconductor devices.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, suitable for applications requiring robust power handling capability.

Terminal Position: SINGLE

Simplified connection layout, enhancing ease of use and reducing chances of error during installation.

Case Connection: COLLECTOR

Facilitates convenient connection to the collector terminal, ensuring proper circuit operation.

Nominal Transition Frequency (fT): 50 MHz

Provides high-frequency operation, suitable for applications requiring rapid switching or amplification of signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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