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D45VH

Onsemi

D45VH by Onsemi

D45VH by Onsemi is a PNP BJT transistor with 80V VCE, 15A IC, and 50MHz fT. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. The transistor's silicon element and flange mount style make it suitable for various power electronics projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,451 parts In-Stock

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1,451

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Digiode

USA . 900 parts In-Stock

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900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 403 parts In-Stock

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$0.162

100+ parts

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$0.156

403

$0.162

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$0.156

Northwest PG Solutions

USA . 1,058 parts In-Stock

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$0.178

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$0.157

1,058

$0.178

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$0.157

TANS Electronics

Latvia . 7,449 parts In-Stock

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7,449

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Problanco Electronics

Mexico . 6,782 parts In-Stock

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6,782

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SupplyDigital Components

Austria . 6,438 parts In-Stock

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6,438

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Kulean Microsystems

USA . 1,863 parts In-Stock

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1,863

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Corphita

USA . 604 parts In-Stock

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Corohmni

South Africa . 104 parts In-Stock

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Overview

Unlock the power of efficient switching with the D45VH by Onsemi. Manufactured with precision and quality in mind, this Power Bipolar Junction Transistor offers unparalleled performance for a variety of applications. From controlling currents to amplifying signals, this PNP transistor is a game-changer in the world of electronics. With a maximum Collector-Emitter Voltage of 80V and a high DC Current Gain of 20, the D45VH delivers reliability and stability like no other. Say goodbye to inefficiency and hello to seamless operation with this top-of-the-line component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this product suitable for switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards and easy soldering during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and provide a secure connection, reducing the risk of loosing connections.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits, providing flexibility in usage.

Package Style (Meter): FLANGE MOUNT

The flange mount package style makes it easy to mount securely in place, suitable for applications where stability is crucial.

Minimum DC Current Gain (hFE): 20

A higher minimum current gain ensures the transistor operates effectively and reliably in various circuit conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for use in applications with higher voltage requirements, offering versatility.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic components, ensuring high performance.

Maximum Collector Current (IC): 15 A

The high collector current capacity enables the transistor to handle larger loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and corrosion resistance, ensuring reliable connections for better performance.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation, making it user-friendly for various applications.

Case Connection: COLLECTOR

The case connection at collector ensures stable grounding and heat dissipation, essential for maintaining transistor performance.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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