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D45VH10BS

Onsemi

D45VH10BS by Onsemi

D45VH10BS by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a nominal transition frequency of 50MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,917 parts In-Stock

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Digiode

USA . 362 parts In-Stock

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362

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Native Components

USA . 354 parts In-Stock

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$0.604

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354

$0.604

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Northwest PG Solutions

USA . 2,119 parts In-Stock

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$0.665

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TANS Electronics

Latvia . 4,999 parts In-Stock

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4,999

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Kulean Microsystems

USA . 3,678 parts In-Stock

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SupplyDigital Components

Austria . 2,567 parts In-Stock

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Problanco Electronics

Mexico . 1,247 parts In-Stock

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UHIMA Technologies

Türkiye . 954 parts In-Stock

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Corphita

USA . 894 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Overview

Enhance your power management solutions with the D45VH10BS by Onsemi. Manufactured by a trusted industry leader, this Power BJT transistor offers reliability and efficiency in switching applications. With a high DC current gain and maximum collector current, this PNP transistor delivers superior performance. Whether you're designing industrial equipment or automotive systems, this product's robust construction and high operating temperature make it a top choice for demanding environments. Trust Onsemi to provide quality components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, ensuring the transistor is long-lasting and reliable in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and can be easily integrated into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high efficiency and fast response times.

Package Shape: RECTANGULAR

Easy to mount and allows for space-efficient PCB layout.

Terminal Form: THROUGH-HOLE

Enables easy soldering and reliable connections for through-hole PCB mounting.

No. of Terminals: 3

Simplifies connection and integration into circuits with minimal additional components.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and easy integration into larger systems or heat sinks.

Minimum DC Current Gain (hFE): 20

Provides consistent amplification and performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

Handles higher voltages, making it suitable for applications requiring higher voltage switching.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads, suitable for power switching applications.

Terminal Finish: TIN LEAD

Provides good solderability and electrical conductivity for reliable connections.

Terminal Position: SINGLE

Simplifies circuit design and installation, ensuring proper orientation during assembly.

Case Connection: COLLECTOR

Provides easy access to the collector terminal for easy integration into circuits.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications, offering fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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