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D45VH10AJ

Onsemi

D45VH10AJ by Onsemi

D45VH10AJ by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. Ideal for switching applications due to its single configuration and silicon element material, it comes in a rectangular package style with flange mount suitable for through-hole terminals.

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Digiode

USA . 224 parts In-Stock

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Vyrian

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Northwest PG Solutions

USA . 473 parts In-Stock

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TANS Electronics

Latvia . 5,622 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 2,051 parts In-Stock

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Corphita

USA . 1,791 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 967 parts In-Stock

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Native Components

USA . 883 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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Overview

Power up your projects with the high-quality D45VH10AJ Power Bipolar Junction Transistor by Onsemi. Manufactured by a trusted name in the industry, this PNP transistor is perfect for switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 15A, this transistor offers reliable performance and durability. Whether you're working on electronic devices or industrial equipment, the D45VH10AJ provides value, efficiency, and peace of mind. Experience the benefits of using a top-notch product from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor suitable for various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this product ideal for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easier integration into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting on circuit boards, improving overall efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and facilitate soldering, ensuring stable and reliable operation.

No. of Terminals: 3

Having three terminals allows for easy connectivity and ensures proper functioning within the circuit.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers a secure attachment to the circuit board, reducing the risk of damage or disconnection.

Minimum DC Current Gain (hFE): 20

With a minimum current gain of 20, this transistor provides consistent amplification and signal processing capabilities.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating of 80V ensures the transistor can handle high voltages without failure, increasing its reliability and versatility.

Transistor Element Material: SILICON

Silicon is a commonly used material in transistors due to its excellent semiconductor properties, ensuring high performance and efficiency.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

The tin lead finish provides good conductivity and corrosion resistance, ensuring long-term reliability and stable performance.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and connection, reducing the risk of errors and improving overall efficiency.

Case Connection: COLLECTOR

The case connection at the collector ensures efficient heat dissipation, prolonging the lifespan of the transistor and improving overall performance.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor can switch rapidly between states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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