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D45VH10

Onsemi

D45VH10 by Onsemi

D45VH10 by Onsemi is a PNP BJT transistor with 83W power dissipation, 80V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and high transition frequency of 50MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$2.170

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Adafruit Industries

USA . 3,000 parts In-Stock

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$2.170

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$2.148

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$2.170

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Component Electronics Inc.

Canada . 50 parts In-Stock

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$1.150

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$0.870

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$0.750

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50

$1.150

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DF Sales Co.

USA . 119 parts In-Stock

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$1.370

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119

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DF Sales Co.

USA . 119 parts In-Stock

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Digiode

USA . 2,288 parts In-Stock

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$2.062

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Vyrian

USA . 1,223 parts In-Stock

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J & M Industries LLC

USA . 350 parts In-Stock

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ComSIT Distribution GmbH

Germany . 130 parts In-Stock

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Tech-Mark Corp

USA . 126 parts In-Stock

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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PC Components Company LLC

USA . 58 parts In-Stock

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Beltway Electronics Company

USA . 50 parts In-Stock

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Bristol Electronics

USA . 26 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 11 parts In-Stock

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Beckwith Electronics

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Electronic Expediters

USA . 7 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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$1.150

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103

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Corphita

USA . 1,446 parts In-Stock

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$1.953

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.170

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$2.148

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$2.062

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$2.170

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Kepictronics

USA . 61,000 parts In-Stock

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Metaverse IC Inc.

Canada . 25,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,514 parts In-Stock

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SupplyDigital Components

Austria . 7,350 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,439 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,626 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 1,851 parts In-Stock

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Problanco Electronics

Mexico . 1,408 parts In-Stock

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Native Components

USA . 789 parts In-Stock

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UHIMA Technologies

Türkiye . 519 parts In-Stock

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Northwest PG Solutions

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Perfect Parts

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Assy Fe

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Overview

Discover the power of the D45VH10 by Onsemi, a high-quality PNP Power BJT transistor designed for switching applications. With a maximum operating temperature of 150 °C and a maximum collector current of 15A, this transistor offers exceptional performance and reliability. Ideal for various electronic projects, the D45VH10 provides customers with unmatched value and benefits. Trust in Onsemi's reputation for producing top-notch components, and experience the advantages of using the D45VH10 in your next design. Unlock new possibilities with this cutting-edge transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for complementary pairing with NPN transistors, enabling efficient switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and PCB layout, making the transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, allowing for space-efficient placement on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical connections, making the transistor suitable for applications with potential mechanical stress.

Maximum Power Dissipation (Abs): 83 W

With a high power dissipation rating, this transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure mounting option, enhancing the reliability of the transistor in various environments.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain ensures consistent performance and stability in transistor amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for safe operation in applications with higher voltages.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in electronic devices.

Maximum Collector Current (IC): 15 A

The high collector current rating enables the transistor to handle large currents, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability, ensuring secure connections during assembly.

Terminal Position: SINGLE

The single terminal position simplifies wiring and connections, reducing the risk of errors during installation.

Case Connection: COLLECTOR

The collector connection simplifies the transistor's role in a circuit, making it easy to identify and integrate into designs.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature helps prevent damage to the transistor during soldering, ensuring product reliability.

Peak Reflow Temperature °C: 235

The high peak reflow temperature ensures effective soldering and secure connections, contributing to the overall durability of the product.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for high-speed operation, making the transistor suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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