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D45VH10BC

Onsemi

D45VH10BC by Onsemi

D45VH10BC by Onsemi is a PNP BJT transistor with max. 80V VCE, 15A IC, and 50MHz fT. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it offers a min hFE of 20 and features silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 776 parts In-Stock

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Vyrian

USA . 608 parts In-Stock

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608

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Native Components

USA . 149 parts In-Stock

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$10.200

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149

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Northwest PG Solutions

USA . 1,094 parts In-Stock

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$11.220

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$10.098

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$11.220

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Problanco Electronics

Mexico . 5,593 parts In-Stock

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Kulean Microsystems

USA . 5,325 parts In-Stock

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5,325

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SupplyDigital Components

Austria . 4,032 parts In-Stock

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Corphita

USA . 1,094 parts In-Stock

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1,094

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TANS Electronics

Latvia . 839 parts In-Stock

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839

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Unlock the potential of your electronics with the D45VH10BC power bipolar junction transistor by Onsemi. With a reputation for excellence, Onsemi delivers top-quality components that exceed industry standards. Ideal for switching applications, this PNP transistor offers reliable performance and durability. Benefit from its high collector-emitter voltage, low minimum DC current gain, and wide operating temperature range. Upgrade your designs with the D45VH10BC and experience superior functionality and long-term value. Trust Onsemi to provide you with the tools you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to implement in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy and secure mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it suitable for applications where reliability is crucial.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable versatile usage.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers easy installation and secure attachment to circuit boards or heat sinks.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures amplification of input signals with high efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for operation in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating of 80V enables the transistor to handle high voltage applications.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics such as high conductivity and durability.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high current loads effectively.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and enhances the overall connection reliability.

Terminal Position: SINGLE

Single terminal position simplifies the circuit connection process and improves overall ease of use.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the circuit layout and enhances the reliability of the transistor.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency of 50MHz enables the transistor to switch quickly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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