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D45VH10AK

Onsemi

D45VH10AK by Onsemi

D45VH10AK by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a nominal transition frequency of 50MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,509 parts In-Stock

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Digiode

USA . 872 parts In-Stock

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Native Components

USA . 185 parts In-Stock

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$1.799

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Northwest PG Solutions

USA . 1,343 parts In-Stock

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Problanco Electronics

Mexico . 5,203 parts In-Stock

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Kulean Microsystems

USA . 4,480 parts In-Stock

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TANS Electronics

Latvia . 4,208 parts In-Stock

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SupplyDigital Components

Austria . 1,831 parts In-Stock

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UHIMA Technologies

Türkiye . 623 parts In-Stock

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Corphita

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Corohmni

South Africa . 478 parts In-Stock

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Overview

Unlock the power of innovation with the D45VH10AK by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors that are perfect for switching applications. The D45VH10AK offers customers unparalleled value with its efficient performance and reliability. Experience seamless functionality and enhanced productivity with this PNP transistor. Whether you're in the industrial, automotive, or consumer electronics sector, the D45VH10AK is the perfect solution for all your power management needs. Trust Onsemi to provide you with top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring stable performance and durability.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required, offering versatility in design.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into various circuit setups.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Compact and space-saving design, ideal for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections, facilitating easy installation and soldering onto circuit boards.

No. of Terminals: 3

Simple and straightforward connectivity, reducing the chances of wiring errors during installation.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and stability, enhancing the overall robustness of the transistor in various applications.

Minimum DC Current Gain (hFE): 20

Ensures sufficient current gain for proper transistor operation, enabling reliable amplification and switching functions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation, suitable for challenging operating environments.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage tolerance, making it suitable for applications where higher voltages may be encountered.

Transistor Element Material: SILICON

Offers high performance and reliability, common in modern transistors for various applications.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for power applications that require significant current capacity.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability, ensuring reliable connections for consistent performance.

Terminal Position: SINGLE

Simplified terminal layout, reducing the chances of wiring errors and facilitating easier circuit integration.

Case Connection: COLLECTOR

Specific connection point for the collector terminal, aiding in proper circuit design and implementation.

Nominal Transition Frequency (fT): 50 MHz

Capable of operating at high frequencies, suitable for applications that require fast switching and response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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