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D45VH10BA

Onsemi

D45VH10BA by Onsemi

D45VH10BA by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. It is used for switching applications in various industries due to its single configuration and through-hole terminal form. The transistor operates at a max temperature of 150 °C and has a nominal transition frequency of 50MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,227 parts In-Stock

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Digiode

USA . 1,989 parts In-Stock

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Native Components

USA . 24 parts In-Stock

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$1.583

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Northwest PG Solutions

USA . 1,174 parts In-Stock

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$1.741

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SupplyDigital Components

Austria . 7,911 parts In-Stock

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Kulean Microsystems

USA . 5,860 parts In-Stock

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Problanco Electronics

Mexico . 4,250 parts In-Stock

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TANS Electronics

Latvia . 3,703 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 64 parts In-Stock

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Overview

Unlock the power of innovation with the D45VH10BA by Onsemi. As a leader in the industry, Onsemi delivers superior quality and reliability in every product they create. Designed for switching applications, this PNP power bipolar junction transistor offers unparalleled performance and efficiency. With a maximum collector-emitter voltage of 80V and a maximum collector current of 15A, the D45VH10BA is perfect for a wide range of electronic devices. Trust Onsemi to provide you with the best-in-class solutions for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and insulation, ensuring the transistor is protected and can operate effectively.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for a variety of electronic switching circuits.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration of the transistor into the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and reliable switching performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the transistor can withstand harsh environmental conditions, increasing its reliability and longevity.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows the transistor to handle higher voltage levels, expanding its range of applications.

Maximum Collector Current (IC): 15 A

With a high maximum collector current, this transistor can handle higher current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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