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D45VH10AS

Onsemi

D45VH10AS by Onsemi

D45VH10AS by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. It is used for switching applications in various industries due to its high operating temperature of 150 °C and silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 8,297 parts In-Stock

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Problanco Electronics

Mexico . 8,111 parts In-Stock

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Kulean Microsystems

USA . 3,537 parts In-Stock

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Corphita

USA . 2,206 parts In-Stock

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TANS Electronics

Latvia . 1,355 parts In-Stock

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Northwest PG Solutions

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Corohmni

South Africa . 383 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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Overview

Enhance your electronic projects with the D45VH10AS Power Bipolar Junction Transistor by Onsemi. With a reputation for top-quality components, Onsemi delivers reliability and performance in every product. Perfect for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 15A, providing the power you need for your projects. Upgrade your designs with the D45VH10AS and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to temperature fluctuations.

Polarity or Channel Type: PNP

PNP transistors are suitable for high-side switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and quick response times in control circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement within circuit boards or other electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection during soldering, reducing the risk of connection failures.

Max Collector-Emitter Voltage: 80V

The high maximum collector-emitter voltage allows for use in a variety of circuit applications that require higher voltage handling capabilities.

Max Collector Current: 15A

With a maximum collector current of 15A, this transistor can handle high current loads, making it suitable for power switching applications.

Nominal Transition Frequency: 50 MHz

The high nominal transition frequency of 50 MHz enables fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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