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D45VH10DW

Onsemi

D45VH10DW by Onsemi

D45VH10DW by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 15A, and min. DC current gain of 20. It is used for switching applications in various electronic circuits due to its high operating temperature of 150 °C and silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,946 parts In-Stock

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Digiode

USA . 1,889 parts In-Stock

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Native Components

USA . 775 parts In-Stock

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$0.639

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Northwest PG Solutions

USA . 1,379 parts In-Stock

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TANS Electronics

Latvia . 5,841 parts In-Stock

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Problanco Electronics

Mexico . 5,649 parts In-Stock

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SupplyDigital Components

Austria . 4,428 parts In-Stock

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Corphita

USA . 1,866 parts In-Stock

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Kulean Microsystems

USA . 1,221 parts In-Stock

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UHIMA Technologies

Türkiye . 292 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Overview

Unleash the power of efficiency with the D45VH10DW by Onsemi, a top-tier manufacturer known for superior quality. This Power Bipolar Junction Transistor (BJT) in a PLASTIC/EPOXY package offers PNP polarity and is ideal for SWITCHING applications. With a maximum Collector-Emitter Voltage of 80V and a robust 15A Collector Current, this transistor ensures reliable performance even in demanding conditions. Upgrade your projects with this high-performance component and experience seamless operation, enhanced productivity, and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ensuring longevity and reliability in various environments.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this product suitable for such purposes.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient operation in on/off control circuits.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in various applications.

Maximum Collector Current (IC): 15 A

Capable of handling high collector currents, this transistor is suitable for applications that require power amplification or switching.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45VH10DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45VH10DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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